Tsukihara Masashi | Venture Business Laboratory Of Intellectual Property Office The University Of Tokushima
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概要
- 同名の論文著者
- Venture Business Laboratory Of Intellectual Property Office The University Of Tokushimaの論文著者
関連著者
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Nishino Katsushi
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Naoi Yoshiki
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Tsukihara Masashi
Venture Business Laboratory Of Intellectual Property Office The University Of Tokushima
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Sakai Shiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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KAWAMICHI Syuichi
Department of Electrical and Electronic Engineering, The University of Tokushima
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Sumiyoshi Kazuhide
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Kataoka Ken
Department Of Cardiology Nagahama City Hospital
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Okimoto Takashi
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Tsukihara Masashi
Venture Business Laboratory of Intellectual Property Office, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Okimoto Takashi
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Yamamoto Mamiko
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Hamazaki Yuta
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Kawamichi Syuichi
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
著作論文
- Al0.17Ga0.83N film using middle-temperature intermediate layer grown on (0001) sapphire substrate by metal-organic chemical vapor deposition
- Growth of AlN and GaN by metalorganic chemical vapor deposition on BP synthesized by flux method