Photoluminescence Study on InGaN/GaN Quantum Well Structure Grown on (112^^-0) Sapphire Substrate
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-07-15
著者
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BAI Jie
Department of Electrical and Electronic Engineering, University of Tokushima
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WANG Tao
Nitride Semiconductors Co., Ltd.
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SAKAI Shiro
Department of Electrical and Electronic Engineering, University of Tokushima
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Bai Jie
Satellite Venture Business Laboratory The University Of Tokushima
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Sakai S
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Sakai S
Tokushima Univ. Tokushima Jpn
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Wang T
Department Of Chemistry University Of Science And Technology Of China
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Sakai Shiro
Graduate School Of Engineering The University Of Tokushima
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Sakai Shiro
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Bai Jie
Department Of Cell Biology And Medical Genetics The First Military Medical University
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Wang Tao
Satellite Venture Business Laboratory The University Of Tokushima
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Sakai S
Sci. Univ. Tokyo Tokyo Jpn
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Sakai Shiun
Faculty Of Engineering The University Of Tokushima
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Sakai Shiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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