X-Ray Diffraction Analysis of GaN and GaN/InGaN/GaN Double-Hetero Structures Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-04-15

著者

• NAOI Yoshiki

  Department of Electrical and Electronic Engineering, The University of Tokushima,

• SATO Hisao

  Department of Dermatology, Jichi Medical School

• Sato Hisao

  Nitride Semiconductor Co. Ltd.

• Sato H

  Research And Development Center Gunze Limited

• SAKAI Shiro

  Department of Electrical and Electronic Engineering, University of Tokushima

• Sakai S

  Electrotechnical Lab. Ibaraki Jpn

• Sakai S

  Tokushima Univ. Tokushima Jpn

• Sakai S

  Department Of Electrical And Electronic Engineering The University Of Tokushinna

• Sakai S

  Electrotechnical Lab. Ibaraki

• Sato Hiroyasu

  Faculty Of Engineering Mie University

• Sato Hiroharu

  Multimedia Eng. Lab.

• Sato H

  Univ. Tokushima Tokushima Jpn

• Sakai S

  Department Of Electrical And Electronic Engineering Tokushima University

• Sakai Shiro

  Graduate School Of Engineering The University Of Tokushima

• Sakai Shiro

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Naoi Y

  Univ. Tokushima Tokushima Jpn

• Naoi Yoshiki

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Sakai S

  Sci. Univ. Tokyo Tokyo Jpn

• Sato H

  Department Of Applied Chemistry Faculty Of Engineering Kumamoto University

• SATO Hisano

  Wireless Research Laboratory, Matsushita Elec. Ind., Co.

• Sunagawa Hiromi

  Department Of Applied Physics Faculty Of Engineering Tohoku University

• Sato Hisao

  Department Of Dermatology Jichi Medical School

• Sakai Shiro

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Sato Hisao

  Department of Applied Physics, Graduate School of Engineering, Tohoku University

• Naoi Yoshiki

  Department of Electrical and Electronic Engineering, The University of Tokushima

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