V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate : Surfaces, interfaces, and Films
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-06-15
著者
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Li H‐d
Shanghai Inst. Ceramics Chinese Acad. Sci. Shanghai Chn
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Li Hongdong
Satellite Venture Business Laboratory The University Of Tokushima
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WANG Tao
Nitride Semiconductors Co., Ltd.
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LIU Yuhuai
Satellite Venture Business Laboratory, University of Tokushima
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SAKAI Shiro
Department of Electrical and Electronic Engineering, University of Tokushima
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AO Jinping
Satellite Venture Business Laboratory, The University of Tokushima
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Sakai S
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Sakai S
Tokushima Univ. Tokushima Jpn
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Sakai S
Electrotechnical Lab. Ibaraki
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Lacroix Y
Univ. Tokushima Tokushima Jpn
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Lacroix Yves
Satellite Venture Business Laboratory The University Of Tokushima
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Lee Young-bae
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Wang T
Department Of Chemistry University Of Science And Technology Of China
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Liu Yuhuai
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Sakai Shiro
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Ao Jinping
Satellite Venture Business Laboratory The University Of Tokushima
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Wang Tao
Satellite Venture Business Laboratory The University Of Tokushima
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Li H
Satellite Venture Business Laboratory The University Of Tokushima
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Sakai Shiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Sakai S
Department Of Chemistry Graduate School Of Engineering Science Osaka University
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Liu Yuhuai
Satellite Venture Business Laboratory The University Of Tokushima
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Ao JP
Satellite Venture Business Laboratory, The University of Tokushima
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Sakai Shiro
Department of Electrical and Electronic Engineering, The University of Tokushima
関連論文
- Influence of Pyramidal Defects on Photoluminescence of Mg-doped AlGaN/GaN Superlattice Structures
- High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
- V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate : Surfaces, interfaces, and Films
- Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films : Surfaces, Interfaces, and Films
- Mid-Infrared Photoluminescence from Liquid Phase Epitaxial InAs_Sb_y/InAs Multilayers
- GaAs / AlGaAs Light Emitters Fabricated on Undercut GaAs on Si
- Thermal Stress and Dislocation Density in Undercut GaAs on Si
- Photoluminescence Dark Spot Dynamics in GaAs Grown on Si
- Stable Operation of AlGaAs/GaAs Light-Emitting Diodes Fabricated on Si Substrate
- Zinc Diffusion in Al_Ga_As Grown on Si Substrate
- A New Reactor for Metalorganic Chemical Vapor Deposition Equipped with an Internal Rotary Flow Selector
- Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition
- Comparison and Investigation of Ohmic Characteristics in the Ni/AuZn and Cr/AuZn Metal Schemes
- Comparison and Investigation of Ohmic Characteristics in Ni/AuZn and Cr/Auzn to p-GaN
- Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN
- Ohmic Contact to P-Type GaN
- Structures for Thermal Stress Reduction in GaAs Layers Grown on Si Substrate
- Stress Distribution Analysis in Structured GaAs Layers Fabricated on Si Substrates
- Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
- Electronic Structure of GaP_N_x Alloys Determined Using Pseudopotentials and Gaussian Orbitals
- Electronic Structures of Wurtzite GaN, InN and Their Alloy Ga_In_xN Calculated by the Tight-Binding Method
- Valence-Band-Edge Energy of Group-III Nitride Alloy Semiconductors
- Effect of Growth Temperature on InGaAsP/GaAsP Expitaxial Growth
- Crosshatch Pattern on InGaAsP Layers Grown on GaAs_P_ Substrate by LPE
- Meltback of GaAs_P_ Substrate in LPE Growth of InGaAsP
- LPE Growth of In_ Ga_xAs_P_y on GaAs_P_
- Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP
- Visible InGaP / GaAsP Dual Wavelength Light Emitting Diodes
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- Ellipsometric Studies on Sputter-Damaged Layer in n-InP
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- Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganie Chemical Vapor Deposition
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- Annealing of GaN-InGaN Multi Quantum Wells : Correlation between the Bandgap and Yellow Photoluminescence
- Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength
- Al_Ga_N Film Using Middle-Temperature Intermediate Layer Grown on (0001) Sapphire Substrate by Metal-Organic Chemical Vapor Deposition
- Optical Properties of Bound Excitons and Biexcitons in GaN(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Reactive Ion Etching of GaN and Al_xGa_N Using Cl_2/CH_4/Ar Plasma
- Excitonic Emissions under High Excitation of Hexagonal GaN Single Crystal Grown by Sublimation Method
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- Growth Style of Bi_4Ti_3O_ Thin Films on CeO_2/Ce_Zr_O_2 Buffered Si Substrates
- Photoluminescence Study on InGaN/GaN Quantum Well Structure Grown on (112^^-0) Sapphire Substrate
- Growth of InAsP on InP by Liquid Phase Electroepitaxy
- Fabrication and Electrical Characteristics of a Trench-Type Metal-Ferroelectric-Metal-Insulator-Semiconductor Field Effect Transistor
- Epitaxial Growth of Bi_4Ti_3O_/CeO_2/Ce_Zr_O_2 and Bi_4Ti_3O_/SrTiO_3/Ce_Zr_O_2 Thin Films on Si and Its Application to Metal-Ferroelectric-Insulator-Semiconductor Diodes
- Surface Morphology and Dielectric Properties of Stoichiometric and Off-Stoichiometric SrTiO_3 Thin Films Grown by Molecular Beam Epitaxy
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- Simplified Dual Channel Optical Trarnsmission Using Integrated Light Emitters and Photodetectors
- Fluxon Transfer Device
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- Transmission Electron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film
- Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
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- Theoretical Study of Energy Levels and Transition Probabilities of Singly Ionized Aluminum(Al II)(Atomic and Molecular Physic)
- Role of Dislocation in InGaN/GaN Quantum Wells Grown on Bulk GaN and Sapphire Substrates(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
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