High Temperature Reactive Ion Etching of GaN and AlGaN Using Cl_2 and CH_4 Plasma
スポンサーリンク
概要
- 論文の詳細を見る
- 1998-09-07
著者
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SAKAI Shiro
Department of Electrical and Electronic Engineering, University of Tokushima
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WANG Tao
Satellite Venture Business Laboratory, The University of Tokushima
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Sakai S
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Wang T
Department Of Chemistry University Of Science And Technology Of China
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SUGAHARA Tomoya
Department of Electrical and Electronic Engineering, The University of Tokushima
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YAMASHITA Kenji
Department of Electrical and Electronic Engineering, University of Tokushima
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Yamashita K
Department Of Astrophysics Nagoya University
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Sugahara Tomoya
The Authors Are With The Department Of Electrical And Electronic Engineering University Of Tokushima
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Sugahara T
The Authors Are With The Department Of Electrical And Electronic Engineering University Of Tokushima
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Sugahara Tomoya
Graduate School Of Engineering The University Of Tokushima
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NAKAGAWA Daisuke
Department of Electrical and Electronic Engineering, The University of Tokushima
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NISHINO Katsushi
Department of Electrical and Electronic Engineering, University of Tokushima
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Sakai Shiro
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Nishino K
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Nishino K
Department Of Electronic Science And Engineering Kyoto University
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Nishino Katsushi
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Yamashita Koujin
Department Of Astrophysics Nagoya University
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Yamashita Kenji
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Nakagawa D
Rohm Co. Ltd. Kyoto Jpn
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Yamashita K
Tsukuba Research Laboratory Nippon Sheet Glass Co. Ltd.
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BASAK Durga
Satelite Venture Buisiness Laboratory, Tokushima University
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Wang Tao
Satellite Venture Business Laboratory The University Of Tokushima
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Yamashita Kenichi
Division Of Science And Materials The Graduate School Of Science And Technology Kobe University
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Nakagawa Daisuke
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Basak Durga
Satelite Venture Buisiness Laboratory Tokushima University
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Yamashita Kimihiro
Department Of Industrial Chemistry Faculty Of Engineering The University Of Tokyo:(present Address)d
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Sakai Shiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Yamashita Kenji
Department Of Bioscience And Biotechnology Fuculty Of Engineering Okayama University
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Sugahara Tomoya
The authors are with the Department of Electrical and Electronic Engineering, University of Tokushima
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Sakai Shiro
Department of Electrical and Electronic Engineering, The University of Tokushima
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