Thermal Stress and Dislocation Density in Undercut GaAs on Si

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-02-15

著者

• FUKUI Masuo

  Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima

• Wada Naoki

  Department of Applied Chemistry, The University of Tokyo

• SAKAI Shiro

  Department of Electrical and Electronic Engineering, University of Tokushima

• Sakai S

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Sakai S

  Tokushima Univ. Tokushima Jpn

• Sakai S

  Department Of Electric And Computer Engineering Nagoya Institute Of Technology

• Sakai S

  Department Of Electrical And Electronic Engineering The University Of Tokushinna

• Sakai S

  Electrotechnical Lab. Ibaraki

• Wada Naoki

  Department Of Electrical And Electronic Engineering Tokushima University

• Wada Naoki

  Department Of Electrical Engineering And Electronics College Of Engineering Osaka Sangyo University

• Wada Naoki

  Department Of Electric And Electronic Engineering University Of Tokushima:matsushita Kotobuki Electr

• Wada Naoki

  Department Of Applied Chemistry The University Of Tokyo

• Sakai S

  Department Of Electrical And Electronic Engineering Tokushima University

• Sakai Shiro

  Graduate School Of Engineering The University Of Tokushima

• Sakai Shiro

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Sakai S

  Faculty Of Education Shinshu University:(present Address)department Of Materials Science And Chemica

• Fukui Masuo

  Department Of Electrical And Electronic Engineering Tokushima University

• Fukui Masuo

  Department Of Electrical And Electronic Engineering Faculty Of Engineering The University Of Tokushi

• Sakai S

  Sci. Univ. Tokyo Tokyo Jpn

• Sakai Shiro

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

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