Surface Plasmon Polaritons on n^+-Type Si Single Crystal
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概要
- 論文の詳細を見る
We have determined the plasma frequency and the relaxation time of electronsin the infrared region for heavily doped Si crystal through the excitation of surfaceplasmon polaritons (SP's). The dispersion relations of SP's on n"-Si have beentheoretically and experimentally obtained.
- 社団法人日本物理学会の論文
- 1984-08-15
著者
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FUKUI Masuo
Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima
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Fukui M
Nakanihon Automotive Coll. Gifu
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TADA Osamu
Department of Biochemical Science and Technology, Faculty of Agriculture, Kagoshima University
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Fukui Masao
Department Of Optical Science And Technology Faculty Of Engineering The University Of Tokushima
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YOKOTA Yoshitomo
Department of Electronic Engineering,Faculty of Engineering,University of Tokushima
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Yokota Yoshitomo
Department Of Electronics Faculty Of Engineering University Of Tokushima
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Fukui Masuo
Department Of Electronics Faculty Of Engineering University Of Tokushima
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Fukui Masuo
Department Of Electrical And Electronic Engineering Faculty Of Engineering The University Of Tokushi
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Tada Osamu
Department Of Electronics Faculty Of Engineering University Of Tokushima
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Tada Osamu
Department Of Biochemical Science And Technology Faculty Of Agriculture Kagoshima University
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