AlGaN/GaN high electron mobility transistor with thin buffer layers

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概要

• 論文の詳細を見る

• An AlGaN/GaN high electron mobility transistor (HEMT) on a high-temperature-grown GaN buffer layer as thin as 0.35 μm has been demonstrated for the first time. The investigation of device characteristics is carried out using fat field-effect transistor (FATFET), ring-type FET and Hall measurements. The field-effect mobility obtained from the FATFET is about 1200 cm2/Vs, whereas the mobility in the buffer layers is around 200 cm2/Vs. A leakage current is found to be due to the non-semi-insulating underlying buffer layers. A two-layer model was adopted to separate the surface channel and buffer channel from Hall measurement data. The surface mobility enhancement can be attributed to the screening effect of ionized impurity and defects by the accumulated electrons.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2003-04-15

著者

• Wang T

  Department Of Chemistry University Of Science And Technology Of China

• Ao JP

  Satellite Venture Business Laboratory, The University of Tokushima

• Ohno Yasuo

  Nitride Semiconductor Co., Ltd., 115-7 Itayajima, Akinokami, Seto-cho, Naruto, Tokushima 771-0360, Japan

• Kikuta D

  Nitride Semiconductor Co., Ltd., 115-7 Itayajima, Akinokami, Seto-cho, Naruto, Tokushima 771-0360, Japan

• Liu YH

  Satellite Venture Business Laboratory, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan

• Sakai S

  Nitride Semiconductor Co., Ltd., 115-7 Itayajima, Akinokami, Seto-cho, Naruto, Tokushima 771-0360, Japan

• Ohno Y

  Nitride Semiconductor Co., Ltd., 115-7 Itayajima, Akinokami, Seto-cho, Naruto, Tokushima 771-0360, Japan

• Kikuta Daigo

  Nitride Semiconductor Co., Ltd., 115-7 Itayajima, Akinokami, Seto-cho, Naruto, Tokushima 771-0360, Japan

• Liu Yu-Huai

  Satellite Venture Business Laboratory, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan

• Wang Tao

  Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan

• Sakai Shiro

  Nitride Semiconductor Co., Ltd., 115-7 Itayajima, Akinokami, Seto-cho, Naruto, Tokushima 771-0360, Japan

関連論文

• High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors(Heterostructure Microelectronics with TWHM2003)
• Influence of Pyramidal Defects on Photoluminescence of Mg-doped AlGaN/GaN Superlattice Structures
• High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
• V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate : Surfaces, interfaces, and Films
• Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films : Surfaces, Interfaces, and Films
• Role of Dislocation in InGaN Phase Separation
• Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer
• Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vpor Deposition
• High Temperature Reactive Ion Etching of GaN and AlGaN Using Cl_2 and CH_4 Plasma
• Photoluminescence Study on InGaN/GaN Quantum Well Structure Grown on (112^^-0) Sapphire Substrate
• Theoretical Study of Energy Levels and Transition Probabilities of Singly Ionized Aluminum(Al II)(Atomic and Molecular Physic)
• Theoretical Study of Energy Levels and Transition Probabilities of Singly Ionized Aluminum (Al II)
• AlGaN/GaN high electron mobility transistor with thin buffer layers

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