Nakagawa D | Rohm Co. Ltd. Kyoto Jpn
スポンサーリンク
概要
関連著者
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Nakagawa D
Rohm Co. Ltd. Kyoto Jpn
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Sakai S
Department Of Electrical And Electronic Engineering The University Of Tokushima
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SUGAHARA Tomoya
Department of Electrical and Electronic Engineering, The University of Tokushima
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Sugahara Tomoya
The Authors Are With The Department Of Electrical And Electronic Engineering University Of Tokushima
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Sugahara T
The Authors Are With The Department Of Electrical And Electronic Engineering University Of Tokushima
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Sugahara Tomoya
Graduate School Of Engineering The University Of Tokushima
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NAKAGAWA Daisuke
Department of Electrical and Electronic Engineering, The University of Tokushima
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Nishino K
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Nishino K
Department Of Electronic Science And Engineering Kyoto University
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Nishino Katsushi
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Nakagawa Daisuke
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Sugahara Tomoya
The authors are with the Department of Electrical and Electronic Engineering, University of Tokushima
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Sakai Shiro
Department of Electrical and Electronic Engineering, The University of Tokushima
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YAMASHITA Kenji
Department of Electrical and Electronic Engineering, University of Tokushima
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Yamashita K
Department Of Astrophysics Nagoya University
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NISHINO Katsushi
Department of Electrical and Electronic Engineering, University of Tokushima
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Yamashita Koujin
Department Of Astrophysics Nagoya University
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Yamashita Kenji
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Yamashita K
Tsukuba Research Laboratory Nippon Sheet Glass Co. Ltd.
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BASAK Durga
Satelite Venture Buisiness Laboratory, Tokushima University
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Yamashita Kenichi
Division Of Science And Materials The Graduate School Of Science And Technology Kobe University
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Basak Durga
Satelite Venture Buisiness Laboratory Tokushima University
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Yamashita Kimihiro
Department Of Industrial Chemistry Faculty Of Engineering The University Of Tokyo:(present Address)d
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Yamashita Kenji
Department Of Bioscience And Biotechnology Fuculty Of Engineering Okayama University
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SAKAI Shiro
Department of Electrical and Electronic Engineering, University of Tokushima
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WANG Tao
Satellite Venture Business Laboratory, The University of Tokushima
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Wang T
Department Of Chemistry University Of Science And Technology Of China
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SAKAI Shiro
Satellite Venture Business Laboratory, University of Tokushima
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Sakai Shiro
Department Of Electrical And Electronic Engineering The University Of Tokushima
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FAREED Qhalid
Satellite Venture Business Laboratory, Tokushima University
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Wang Tao
Satellite Venture Business Laboratory The University Of Tokushima
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Fareed Qhalid
Satellite Venture Business Laboratory Tokushima University
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Sakai Shiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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NAOI Yoshiki
Department of Electrical and Electronic Engineering, The University of Tokushima,
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Yamada Akira
Frontier Research Program The Institute Of Physical And Chemical Research (riken)
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Fons P
Optoelectronic Materials And Devices Group Photonics Research Institute National Institute Of Advanc
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HAO Maosheng
Satellite Venture Business Laboratory, Nitride Photonic Semiconductors Laboratory, The University of
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Hao Maosheng
Satellite Venture Business Laboratory Nitride Photonic Semiconductors Laboratory The University Of T
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NIKI Shigeru
Optoelectronics Division, Electrotechnical Laboratory
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YAMADA Akimasa
Optoelectronics Division, Electrotechnical Laboratory
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FONS Paul
Optoelectronics Division, Electrotechnical Laboratory
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ITO Norikazu
Optical Device Research and Development Division, Rohm Company Limited
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SONOBE Masayuki
Optical Device Research and Development Division, Rohm Company Limited
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Fons Paul
Optoelectronic Materials And Devices Group Photonics Research Institute National Institute Of Advanc
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NISHINO Katsusi
Department of Electrical and Electronic Engineering, The University of Tokushima
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NAKAHARA Ken
Optical Devices R&D Center, ROHM Co., Ltd.
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TAMURA Kentaro
Optical Devices R&D Center, ROHM Co., Ltd.
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SAKAI Mitsuhiko
Optical Devices R&D Center, ROHM Co., Ltd.
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NAKAGAWA Daisuke
Optical Devices R&D Center, ROHM Co., Ltd.
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TAKASU Hidemi
Optical Devices R&D Center, ROHM Co., Ltd.
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TAMPO Hitoshi
Optoelectronic Materials and Devices Group, Photonics Research Institute, National Institute of Adva
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MATSUBARA Koji
Optoelectronic Materials and Devices Group, Photonics Research Institute, National Institute of Adva
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IWATA Kakuya
Optoelectronic Materials and Devices Group, Photonics Research Institute, National Institute of Adva
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Naoi Y
Univ. Tokushima Tokushima Jpn
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Naoi Yoshiki
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Takasu Hidemi
Rohm Co. Ltd. Kyoto Jpn
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Nakagawa Daisuke
Research And Development Headquarters Rohm Co. Ltd.
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Tampo Hitoshi
Optoelectronic Materials And Devices Group Photonics Research Institute National Institute Of Advanc
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Takasu Hidemi
Research And Development Headquarters Rohm Co. Ltd.
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OKAMOTO Kuniyoshi
Research and Development Headquarters, ROHM Co., Ltd.
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OHTA Hiroaki
Research and Development Headquarters, ROHM Co., Ltd.
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ICHIHARA Jun
Research and Development Headquarters, ROHM Co., Ltd.
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SONOBE Masayuki
Research and Development Headquarters, ROHM Co., Ltd.
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Ichihara Jun
Research And Development Headquarters Rohm Co. Ltd.
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Okamoto Kuniyoshi
Research And Development Headquarters Rohm Co. Ltd.
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Sonobe Masayuki
Research And Development Headquarters Rohm Co. Ltd.
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Ohta Hiroaki
Rohm Co. Ltd. Kyoto Jpn
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Ohta Hiroaki
Research And Development Headquarters Rohm Co. Ltd.
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Suguhara Tomoya
Department of Electrical and Electronic Engineering, The University of Tokushima
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Naoi Yoshiki
Department of Electrical and Electronic Engineering, The University of Tokushima
著作論文
- Role of Dislocation in InGaN Phase Separation
- Improved External Efficiency InGaN-Based Light-Emitting Diodes with Transparent Conductive Ga-Doped ZnO as p-Electrodes
- Reactive Ion Etching of GaN and Al_xGa_N Using Cl_2/CH_4/Ar Plasma
- Selective Etching of GaN over Al_xGa_N Using Reactive Ion Plasma of Cl_2/CH_4/Ar Gas Mixture
- High Temperature Reactive Ion Etching of GaN and AlGaN Using Cl_2 and CH_4 Plasma
- Dislocation-Free m-Plane InGaN/GaN Light-Emitting Diodes on m-Plane GaN Single Crystals