Dislocation reduction in GaN layer by introducing GaN-rich GaNP intermediate layers

スポンサーリンク

概要

• 論文の詳細を見る

• We report a new method of reducing the dislocation density in a GaN epilayer grown on sapphire by metalorganic chemical vapor deposition (MOCVD), by introducing GaN-rich-GaNP/GaN multiple layers (MLs) during the growth of the GaN layer. It is found that some threading dislocations bend and/or terminate near the ML region, which would suppress the dislocations propagating to the top film surface. The dislocation density in the films consequently decreases to $6\times 10^{8}$ cm-2 in the GaN epilayer with GaNP/GaN MLs, which is a decrease of factor 2 with respect to that in a conventionally grown GaN epilayer. It is considered that the ternary GaN-rich GaNP selectively deposits in the regions of those dislocation-induced pits on the as-grown GaN surface, and then influences the propagation properties of the dislocations. This method can be applied to many devices such as laser diodes whose performance is deteriorated by dislocations.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-04-15

著者

• Li Hongdong

  Satellite Venture Business Laboratory The University Of Tokushima

• Naoi Yoshiki

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Tsukihara Masashi

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Sakai S

  Department Of Chemistry Graduate School Of Engineering Science Osaka University

• Li Hongdong

  Satellite Venture Business Laboratory, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan

関連論文

• High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors(Heterostructure Microelectronics with TWHM2003)
• Influence of Pyramidal Defects on Photoluminescence of Mg-doped AlGaN/GaN Superlattice Structures
• High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
• V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate : Surfaces, interfaces, and Films
• Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films : Surfaces, Interfaces, and Films
• Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition
• Comparison and Investigation of Ohmic Characteristics in the Ni/AuZn and Cr/AuZn Metal Schemes
• Comparison and Investigation of Ohmic Characteristics in Ni/AuZn and Cr/Auzn to p-GaN
• Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN
• Ohmic Contact to P-Type GaN
• Role of Dislocation in InGaN Phase Separation
• Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
• Study of Threading Dislocations in Wurtzite GaN Films Grown on Sapphire by Metalorganic Chemical Vapor Deposition
• Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
• Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer
• Dislocation Reduction in GaN Epilayers Grown on a GaNP Buffer on Sapphire Substrate by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
• Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganie Chemical Vapor Deposition
• X-Ray Diffraction Analysis of GaN and GaN/InGaN/GaN Double-Hetero Structures Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition
• Electron Microscopic Study on the Initial Stages of (111)-Oriented Diamonds Grown on Pt Substrates
• Mechanism of Oscillatory Electrodeposition of Zinc, Revealed by Microscopic Inspection of Dendritic Deposits during the Oscillation
• New Autocatalytic Mechanism for Metal Electrodeposition Leading to Oscillations and Fern-Leaf-Shaped Deposits
• Transmission Electron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film
• Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
• Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method
• Evaluation of Surface Roughness Parameters of Metal Films by Light Scattering Technique
• Al0.17Ga0.83N film using middle-temperature intermediate layer grown on (0001) sapphire substrate by metal-organic chemical vapor deposition
• Effect of GaNP buffer layer on AlGaN epilayers deposited on (0001) sapphire substrates by metalorganic chemical vapor deposition
• Dislocation reduction in GaN layer by introducing GaN-rich GaNP intermediate layers
• Growth of AlN and GaN by metalorganic chemical vapor deposition on BP synthesized by flux method
• The Quantum-Confined-Stark-Effect on the luminescence properties of InGaN/GaN/AlGaN pn junction structure
• Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganic Chemical Vapor Deposition

もっと見る 閉じる

スポンサーリンク