The Quantum-Confined-Stark-Effect on the luminescence properties of InGaN/GaN/AlGaN pn junction structure
スポンサーリンク
概要
- 論文の詳細を見る
The temperature dependence of luminescence properties was investigated on an undoped In_<0.126>Ga_<0.874>N/GaN Multiple-quantum-wells(MQW)structure and a pn junction structure(pn)using this MQW as a active layer. At a low temperature(about 20K), the emission intensity of a pn is much higher than that of MQW structure while it becomes lower than that of MQW structure at room temperature. In addition, from about 150k, it is observed that with the increase of temperature, the emission peak from pn makes much stronger redshift than that of the MQW structure, furthermore, its intensity also decreases much larger than that of the MQW structure. This behavior of the pn junction structure is attributed to the quantum-confined-stark effect due to its structure-induced electric field.
- 一般社団法人電子情報通信学会の論文
- 1998-06-16
著者
-
Sakai S
Department Of Chemistry Graduate School Of Engineering Science Osaka University
-
Sugahara T
Department of Electrical and Electronic Engineering The University of Tokushima
-
Wang T.
Satellite Venture Business Laboratory
関連論文
- Influence of Pyramidal Defects on Photoluminescence of Mg-doped AlGaN/GaN Superlattice Structures
- High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
- V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate : Surfaces, interfaces, and Films
- Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films : Surfaces, Interfaces, and Films
- Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer
- Dislocation Reduction in GaN Epilayers Grown on a GaNP Buffer on Sapphire Substrate by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Mechanism of Oscillatory Electrodeposition of Zinc, Revealed by Microscopic Inspection of Dendritic Deposits during the Oscillation
- New Autocatalytic Mechanism for Metal Electrodeposition Leading to Oscillations and Fern-Leaf-Shaped Deposits
- Effect of GaNP buffer layer on AlGaN epilayers deposited on (0001) sapphire substrates by metalorganic chemical vapor deposition
- Dislocation reduction in GaN layer by introducing GaN-rich GaNP intermediate layers
- The Quantum-Confined-Stark-Effect on the luminescence properties of InGaN/GaN/AlGaN pn junction structure