Effect of GaNP buffer layer on AlGaN epilayers deposited on (0001) sapphire substrates by metalorganic chemical vapor deposition
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概要
- 論文の詳細を見る
AlxGa1-xN ($x \leq 0.1$) epilayers grown on (0001) sapphire substrates by low-pressure metalorganic chemical vapor deposition with low-temperature (LT)-GaNP buffer have been characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). It is found that the full width at half maximum (FWHM) values of the GaNP-buffer-based AlxGa1-xN ($x \leq 0.1$) epilayers decrease are lower than that of the conventional GaN-buffer-based AlxGa1-xN ($x \leq 0.1$) epilayers, but the difference becomes smaller as the Al composition increases. These results could be mainly attributed to a longer diffusion length with the GaNP buffer layer than with the GaN buffer layer.
- Japan Society of Applied Physicsの論文
- 2006-03-25
著者
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Nishino K
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Sumiyoshi Kazuhide
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Naoi Y
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Tsukihara Masashi
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Okimoto Takashi
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Kataoka K
Department Of Histology And Cell Biology Graduate School Of Biomedical Sciences Hiroshima University
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Sakai S
Department Of Chemistry Graduate School Of Engineering Science Osaka University
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Naoi Yoshiki
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Tsukihara Masashi
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Kataoka Ken
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Sakai Shiro
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Okimoto Takashi
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Nishino Katsushi
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Sumiyoshi Kazuhide
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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