Tsukihara Masashi | Department Of Electrical And Electronic Engineering The University Of Tokushima
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概要
関連著者
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Tsukihara Masashi
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Sakai S
Department Of Chemistry Graduate School Of Engineering Science Osaka University
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Li Hongdong
Satellite Venture Business Laboratory The University Of Tokushima
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Naoi Yoshiki
Department Of Electrical And Electronic Engineering The University Of Tokushima
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NAOI Yoshiki
Department of Electrical and Electronic Engineering, The University of Tokushima,
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Li H‐d
Shanghai Inst. Ceramics Chinese Acad. Sci. Shanghai Chn
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SAKAI Shiro
Department of Electrical and Electronic Engineering, University of Tokushima
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Sakai S
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Tsukihara M
Venture Business Laboratory Of Intellectual Property Office The University Of Tokushima
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Sakai Shiro
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Nishino K
Department Of Electrical And Electronic Engineering The University Of Tokushima
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TSUKIHARA Masashi
Department of Electrical and Electronic Engineering, The University of Tokushima
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Naoi Y
Univ. Tokushima Tokushima Jpn
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Sumiyoshi Kazuhide
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Naoi Y
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Li H
Satellite Venture Business Laboratory The University Of Tokushima
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Okimoto Takashi
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Kataoka K
Department Of Histology And Cell Biology Graduate School Of Biomedical Sciences Hiroshima University
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Sakai Shiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Naoi Yoshiki
Department of Electrical and Electronic Engineering, The University of Tokushima
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Naoi Yoshiki
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Tsukihara Masashi
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Kataoka Ken
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Sakai Shiro
Department of Electrical and Electronic Engineering, The University of Tokushima
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Sakai Shiro
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Okimoto Takashi
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Nishino Katsushi
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Sumiyoshi Kazuhide
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Li Hongdong
Satellite Venture Business Laboratory, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
著作論文
- Dislocation Reduction in GaN Epilayers Grown on a GaNP Buffer on Sapphire Substrate by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Effect of GaNP buffer layer on AlGaN epilayers deposited on (0001) sapphire substrates by metalorganic chemical vapor deposition
- Dislocation reduction in GaN layer by introducing GaN-rich GaNP intermediate layers