TSUKIHARA Masashi | Department of Electrical and Electronic Engineering, The University of Tokushima
スポンサーリンク
概要
関連著者
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NAOI Yoshiki
Department of Electrical and Electronic Engineering, The University of Tokushima,
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SAKAI Shiro
Department of Electrical and Electronic Engineering, University of Tokushima
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TSUKIHARA Masashi
Department of Electrical and Electronic Engineering, The University of Tokushima
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Li H‐d
Shanghai Inst. Ceramics Chinese Acad. Sci. Shanghai Chn
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Li Hongdong
Satellite Venture Business Laboratory The University Of Tokushima
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Sakai S
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Sakai S
Tokushima Univ. Tokushima Jpn
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Tsukihara M
Venture Business Laboratory Of Intellectual Property Office The University Of Tokushima
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NISHINO Katsushi
Department of Electrical and Electronic Engineering, University of Tokushima
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Sakai Shiro
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Nishino K
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Naoi Y
Univ. Tokushima Tokushima Jpn
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Naoi Yoshiki
Department Of Electrical And Electronic Engineering The University Of Tokushima
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SUMIYOSHI Kazuhide
Department of Electrical and Electronic Engineering, The University of Tokushima
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KATAOKA Ken
Department of Electrical and Electronic Engineering, The University of Tokushima
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OKIMOTO Takashi
Department of Electrical and Electronic Engineering, The University of Tokushima
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Tsukihara Masashi
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Li H
Satellite Venture Business Laboratory The University Of Tokushima
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Sakai Shiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Sakai S
Department Of Chemistry Graduate School Of Engineering Science Osaka University
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Naoi Yoshiki
Department of Electrical and Electronic Engineering, The University of Tokushima
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Sakai Shiro
Department of Electrical and Electronic Engineering, The University of Tokushima
著作論文
- Dislocation Reduction in GaN Epilayers Grown on a GaNP Buffer on Sapphire Substrate by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Effect of GaNP Buffer Layer on AlGaN Epilayers Deposited on (0001) Sapphire Substrates by Metalorganic Chemical Vapor Deposition