Fabrication and Photovoltaic Measurements of Surface Nanostructure of AlGaInN-Based Photodetector
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概要
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The photovoltage from a surface nanostructure photodetector was measured at wavelengths of 410 and 388 nm as a function of incident angle. Nanostructure devices were fabricated from the wafer with the light-emitting diode (LED) structure grown by metal organic chemical vapor deposition (MOCVD). A nanopattern was successfully fabricated on the surface of the wafer by a nanoimprint lithography technique. The nanopattern was designed as regular triangles consisting of columns, whose diameter and period were 150 and 300 nm, respectively. The photovoltage between the p- and n-layers of the surface nanostructure photodetector showed 6 or 12 periods when the incident illumination angle was changed. The photovoltage minimums were obtained at 30° off of the direction $(10\bar{1}0)$ of GaN at large incident angle, and this corresponded well to the experimental results obtained from the LED with the same nanopattern.
- 2009-11-25
著者
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Sakai Shiro
Graduate School Of Engineering The University Of Tokushima
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TANAKA Satoru
SCIVAX Co.
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Zhang Jing
Graduate School of Advanced Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Naoi Yoshiki
Graduate School of Advanced Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Fukano Atsuyuki
SCIVAX Corporation, Science Park East 502, 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan
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Sakai Shiro
Graduate School of Advanced Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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