Green Light Emission From GaInNAs/GaN Multiple Quantum Well
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概要
- 論文の詳細を見る
10 period of multiple quantum well structure of GaN/GaInN/GaInNAs/GaInN was grown on GaN, and the photoluminescence in the green wavelength region of 500-600 nm has been obtained at room temperature for the first time.
- 社団法人応用物理学会の論文
- 1998-12-15
著者
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Wang Jie
Satellite Venture Business Laboratory University Of Tokushima
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Sakai Shiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
関連論文
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