Very Low Dark Current P-p-P Base InGaAsP/InP Phototransistors
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概要
- 論文の詳細を見る
The characteristics of low dark current and high sensitivity InGaAsP/InP phototransistors are described. To achieve low dark current, new transistor structure which contains an N-InP emitter, P^--InP/p-InGaAsP/P^--InP base and N-InP collector structure is employed. In one device which has the current gain of 30 and 500 at incident power of 5 nW and 5 μW, respectively, the lowest dark current of 650 pA (3.6×10^<-6> A/cm^2) at V_<CE>=1V has been obtained. The dark current of the transistor can be reduced by increasing the P^--InP layer thickness at the expense of the current gain.
- 社団法人応用物理学会の論文
- 1983-03-20
著者
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Sakai Shiro
Department Of Engineering Science Nagoya Institute Of Technology
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Sakai Shiro
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Kobayashi Masahiro
Department Of Gastroenterology Toranomon Hospital
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Sakai Shiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Kobayashi Masahiro
Department Of Engineering Science Nagoya Institute Of Technology
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Kobayashi Masahiro
Department Of Chest Surgery Kitakyushu City Yahata Hospital
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