X-Ray Induced Photoconductivity in Anthracene

概要

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The photoconductivity has been studied in anthracene by irradiation with 50 kV, 0.4 μ sec X-ray pulses. The temperature dependence of hole mobility can be described in terms of a multiple-trapping mechanism; μ_h=3.46×10^2T^<-1・1>[1+N_t/N_υexp(?ε/kT)]^<-1>, where N_t=1.4×10^<17>cm^<-3> and ?_ε=0.19 eV, while electrons represent μ_e=3.6×10^2T^<-1・3>, in the range from 316°K to 238°K. The schubweg per unit field is 2.6×10^<-5>cm^2/V for holes, while for electrons this value is 1.8×10^<-5> cm^2/V at room temperature. The number of collected carriers increases with temperature with the activation energies of 0.02 eV for T≥270°K and of ∼0.06 eV for T<270°K where carrier recombination is predominant. It is shown that in the broad conductivity state wherein electrons have a long mean free path of ≥100Å, the probability for escaping from the attractive coulomb field is more than 4×10^<-1&g;.
社団法人応用物理学会の論文
1968-08-05