Temperature Dependence of Acoustoelectric Current Oscillation in n-GaAs
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概要
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Temperature dependence of the acoustoelectric current oscillation in n-GaAs is investigated from 23 K to 180 K. 1/τ_p anp φ_c/φ_0 are nearly independent of temperature and are 〜3.5×10^6 sec^lt;-1> and 〜2.5 from 50 K to 120 K, respectively. Here, 1/τ_p, φ_c and φ_0 are the attenuation coefficient of amplified acoustic waves, the critical acoustic flux at which the current oscillation occurs and the acoustic flux at thermal noise level, respectively. The threshold electric field at which the current oscillation occurs increases with increasing temperature. The drift velocity of electrons, when the current is in saturation, is larger than the velocity of acoustic waves and increases with increasing temperature.
- 社団法人応用物理学会の論文
- 1972-06-05
著者
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Inuishi Yoshio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Harada Hiroshi
Semiconductor R & D Department Kita-itami Works Mitsubishi Electric Corp.
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