Properties of High Heat-Resistance μc-SiC_x:H Emitter Silicon HBT's
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-05-20
著者
-
AMEMIYA Yoshihito
Department of Electrical Engineering, Hokkaido University
-
Amemiya Yoshihito
Department Of Electrical Engineering Hokkaido University:research Center For Interface Quantum Elect
-
Amemiya Yoshihito
Ntt Lsi Laboratories
-
Imai Keitaro
Ulsi Process Engineering Laboratory Microelectronics Engineering Laboratory Toshiba Corporation
-
Imai K
Toyota Physical And Chemical Research Institute
-
KUWAGAKI Mamoru
NTT LSI Laboratories
-
Amemiya Y
Department Of Electrical Engineering Hokkaido University
-
IMAI Kazuo
NTT LSI Laboratories
-
Kuwagaki M
Ntt Lsi Laboratories
-
Kuwagaki Mamoru
Department Of Electrical Engineering Faculty Of Engineering Osaka University
関連論文
- An On-Chip PVT Compensation Technique with Current Monitoring Circuit for Low-Voltage CMOS Digital LSIs
- High-Resistance Resistor Consisting of a Subthreshold CMOS Differential Pair
- Photon Position Detector Consisting of Single-Electron Devices
- Ultralow-Power Current Reference Circuit with Low Temperature Dependence(Building Block, Analog Circuit and Device Technologies)
- An On-Chip PVT Compensation Technique with Current Monitoring Circuit for Low-Voltage CMOS Digital LSIs
- Ru Electrode Deposited by Sputtering in Ar/O_2 Mixture Ambient
- Interfacial Layers between Si and Ru Films Deposited by Sputtering in Ar/O_2 Mixture Ambient
- High-Resistance Resistor Consisting of a Subthreshold CMOS Differential Pair
- High-Resistance Resistor Consisting of a Subthreshold CMOS Differential Pair
- Low-Voltage Process-Compensated VCO with On-Chip Process Monitoring and Body-Biasing Circuit Techniques
- A Highly Sensitive Thermosensing CMOS Circuit Based on Self-Biasing Circuit Technique
- Threshold-Logic Devices Consisting of Subthreshold CMOS Circuits
- CMOS Voltage Reference Based on the Threshold Voltage of a MOSFET
- A CMOS Watchdog Sensor for Certifying the Quality of Various Perishables with a Wider Activation Energy(Selected Papers from the 18th Workshop on Circuits and Systems in Karuizawa)
- Single Crystal X-Ray Structure Analysis of Bi_2(Sr, Ca)_2CuO_x and Bi_2(Sr, Ca)_3Cu_2O_x Superconductors : Electrical Properties of Condensed Matter
- A νMOS Vision Chip Based on Cellular-Automaton Processing
- A υMOS Vision Chip Based on the Cellular-Automaton Processing
- Cellular vMOS Circuits Performing Edge Detection with Difference-of-Gaussian Filters
- Characteristics of Schottky Contacts on n-InP and n-GaAs by a Novel in situ Electrochemical Process
- Schottky Contacts on n-InP with High Barrier Heights and Reduced Fermi-Level Pinning by a Novel In Situ Electrochemical Process
- Electrical Properties of Regrowth ZnSe Homointerfaces Formed by Molecular Beam Epitaxy
- Electrical Properties of ZnSe/ZnSe Homointerfaces Formed by MBE Regrowth Process
- Characterization of Epitaxial ZnSe/GaAs(100) Interface Properties and Their Control by (HF+Se)-Pretreatment
- Characterization and Control of MBE-ZnSe/GaAs(100) Substrate Interface and Regrown ZnSe/ZnSe Homointerface
- CMOS phase-shift oscillator using the conduction of heat(Session8A: Si Devices III)
- CMOS phase-shift oscillator using the conduction of heat(Session8A: Si Devices III)
- Reaction-Diffusion Devices Using Minority-Carrier Transport in Semiconductors
- Scanning Tunneling and Atomic Force Microscopy of T4 Bacteriophage and Tobacco Mosaic Virus
- Superconductivity and Crystal Structure of LaBa_2Cu_O_y Compounds
- Si-SiO_2 Interface Structures : Chemical Shifts in Si 2p Photoelectron Spectra : Surfaces, Interfaces and Films
- Effects of Current Stress on the Characteristics of a Si Heterojunction Bipolar Transistor with a Hydrogenated Microcrystalline Si Emitter
- Analog VLSI Implementation of Adaptive Algorithms by an Extended Hebbian Synapse Circuit
- Structure of the High T_c Superconductor, Ba_2LaCu_O_ : Studies on La-Ba Ordering and Oxygen Defects
- Quantum Cellular Automaton Device Using the Image Charge Effect
- A vMOS Cellular-Automaton Device for Differential-of-Gaussian Filtering
- Directional Single-Electron-Tunneling Junction
- Properties of High Heat-Resistance μc-SiC_x:H Emitter Silicon HBT's
- Silicon HBT with a Low-Resistivity Amorphous SiC_x Emitter
- Single-Electron Logic Systems Based on a Graphical Representation of Digital Functions(Novel Device Architectures and System Integration Technologies)
- Effect of Carbonic Anhydrase II in Molten Globule State on Physical Properties of Dimyristoylphosphatidylcholine Liposme
- Ultrasonic Properties of a Binary System of a Soluble Protein, α-Lactalbumin and Dimyristoyl Phosphatidylcholine Membrane
- Effects of Annealing Conditions on Superconducting Properties of BiCaSrCu_2O_x Ceramics Prepared by the Melt Quenching Method : Electrical Properties of Condensed Matter
- High-T_c Superconducting Glass Ceramics Based on the Bi-Ca-Sr-Cu-O System : Electrical Properties of Condensed Matter
- Preparation of High-T_c Superconducting Bi-Ca-Sr-Cu-O Ceramics by the Melt Quenching Method : Electrical Properties of Condensed Matter
- Crystalline Phases in Superconductor Ba-Y-Cu-O with High T_c Prepared by Melting Method
- Liquid Quenched Superconductor Ba-Y-Cu-O with T_=88 K and AC Josephson Effect at 77 K
- Study of a Veil Structure and a Two-Step Corrosion Suppression Process in Al-Si-Cu Etching
- Quantum-Dot Logic Circuits Based on the Shared Binary-Decision Diagram
- Substrate Temperature Dependence of Electron Drift Mobility in Glow-Discharged Hydrogenated Amorphous Silicon
- Effects of GaAs Surface Pretreatment and Post-Growth Annealing on Interface Properties of MBE-ZnSe/GaAs(Sub.) System
- 1P377 Discrimination of G-protein by analyzing physicochemical properties of N- and C- terminal regions of G-proteins(15. Cellular signal transduction,Poster Session,Abstract,Meeting Program of EABS & BSJ 2006)
- Thin-SOI Process Using Bonding and Etch-Back Method without Epitaxial Growth
- Effects of Hydrogen Dilution of Silane on Properties of Glow-Discharged Undoped Hydrogenated Silicon
- Effect of Substrate Temperature on Properties of Glow-Discharged Hydrogenated Amorphous Silicon
- Thin-SOI Process Using Bonding and Etch-back Method without Epitaxial Growth