Thin-SOI Process Using Bonding and Etch-back Method without Epitaxial Growth

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概要

• 論文の詳細を見る

• A new thin-SOI process is proposed. This process is classified as a single etch-stop method. It uses an etch-stopped layer as an active layer by decreasing boron concentration in the etch-stopped layer so that an epitaxial layer is not needed. The boron concentration in the 500-nm-thick p+ layer after etch-stopping is decreased from 7×1019 cm-3 to less than 2×1017 cm-3 by hydrogen annealing at 1100°C for 3 h. Additionally, surface roughness is decreased from 2.3 nm to about 0.2 nm. This value is almost equivalent to a polished wafer roughness. This process is simple and does not require complicated equipment, thus allowing for the manufacture of a low-cost SOIs.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1996-02-28

著者

• IMAI Kazuo

  NTT LSI Laboratories

• Unno Hideyuki

  Ntt Lsi Laboratories

• Imai Kazuo

  NTT LSI Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan

• Unno Hideyuki

  NTT LSI Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan

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• Thin-SOI Process Using Bonding and Etch-Back Method without Epitaxial Growth
• Thin-SOI Process Using Bonding and Etch-back Method without Epitaxial Growth

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