Soft X-Ray Reduction Lithography Using Multilayer Mirrors : X-Ray Lithography
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-04-30
著者
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Komano H
Tokyo Ohka Kogyo Co. Ltd. Kanagawa Jpn
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TAKENAKA Hisataka
NTT Interdisciplinary Research Laboratories
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KURIHARA Kenji
NTT LSI Laboratories
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Kurihara Kazuaki
Plasma Research Center University Of Tsukuba:(present) Japan Atomic Energy Research Institute
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Kurihara Kazuaki
Fujitsu Laboratories Inorganic Materials & Polymers Laboratory
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KINOSHITA Hiroo
NTT LSI Laboratories
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Takenaka H
Ntt Advanced Technology Corp.
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Kinoshita H
Laboratory Of Advanced Science And Technology For Industry University Of Hyogo
関連論文
- X-Ray Standing Wave Analysis of GaAs/Si Interface
- Investigation of Edge Plasmas in the Anchor Cell Region of GAMMA 10 : Fluids, Plasmas, and Electric Discharges
- Measurement of End Loss Electrons and Ions from a Hot Ion Plasma in a Tandem Mirror
- Velocity-Space Diffusion of Wave-Heated Electrons in a Mirror Field
- Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
- A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
- Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
- Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
- Si Single-Electron Transistors on SIMOX Substrates (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
- Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
- Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation
- Study of Potential Formation in an Open Magnetic Field Configuration
- Energy Analysis of ECRH-Induced End-Loss Warm Electrons in a Tandem Mirror
- Potential Distribution in the End Region of the GAMMA10 Tandem Mirror Associated with Electron Flow Control
- Current Balance at an Endplate of the GAMMA10 Tandem Mirror
- Axial and Radial Potential Distributions in the GAMMA10 Tandem Mirror
- Validity of a Model Electron Distribution Function in an End Region of a Tandem Mirror
- A New Approach to Reducing Line-Edge Roughness by Using a Cross-Linked Positive-Tone Resist
- Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
- Sub-10-nm Si Lines Fabricated Using Shifted Mask Patterns Controlled with Electron Beam Lithography and KOH Anisotropic Etching
- Fabrication of One-Dimensional Silicon Nanowire Structures with a Self-Aligned Point Contact
- Critical Dimension Measurement in Nanometer Scale by Using Scanning Probe Microscopy
- An Electron Beam Nanolithography System and its Application to Si Nanofabrication
- Metrology of Atomic Force Microscopy for Si Nano-Structures
- Effect of Chelating Agents on High Resolution Electron Beam Nanolithography of Spin-Coatable Al_2O_3 Gel Films
- A Multiple Wavelength Vertical-Cavity Surface-Emitting Laser (VCSEL) Array for Optical Interconnection
- Thermal Analysis of Laser-Emission Surface-Normal Optical Devices with a Vertical Cavity
- Novel Evaluation System for Extreme Ultraviolet Lithography Resist in NewSUBARU
- Observation of a Radial Current at a Plug/Barrier Cell in GAMMA10 : Fluids, Plasmas, and Electric Discharges
- Microoptical Two-Dimensional Devices for the Optical Memory Head of an Ultrahigh Data Transfer Rate and Density Sytem Using a Vertical Cavity Surface Emitting Laser (VCSEL) Array
- Fabrication of Micro-Pyramidal Probe Array with Aperture for Near-Field Optical Memory Applications
- Quantized Conductance of a Silicon Wire Fabricated by Separation-by-Implanted-Oxygen Technology
- Structure of Trimer-Type Isocyanate Hardening Agents and Reactivity of Their Isocyanate Group
- Estimation of Reactivity of Isocyanate Groups by Calculation and Magnetochemical Measurement
- Temperature Dependence of Piezoelectric Constant of 0.5PbNi_Nb_O_3-0.5Pb(Zr, Ti)O_3 Ceramics in the Vicinity of Morphotropie Phase Boundary
- Piezoelectric Properties of PbNi_Nb_O_3-PbTiO_3-PbZrO_3 Ceramics
- Soft X-Ray Reduction Lithography Using Multilayer Mirrors : X-Ray Lithography
- Soft X-Ray Reduction Lithography Using Multilayer Mirrors
- Laser-Induced Shock Compression of Tantalum to 1.7 TPa
- Contrast Measurement of Reflection Masks Fabricated from Cr and Ta Absorbers for Extreme Ultraviolet Lithography
- Uniformity Improvement of Optical and Electrical Characteristics in Integrated Vertical-to-Surface Transmission Electro-Photonic Device with a Vertical Cavity
- Double-Mesa-Structure Vertical-to-Surface Transmission Electro-Photonic Device with a Vertical Cavity
- Pixels Consisting of Double Vertical-Cavity Detector and Single Vertical-Cavity Laser Sections for 2-D Bidirectional Optical Interconnections
- Vertical to Surface Transmission Electro-Photonic Device (VSTEP) and Its Application to Optical Interconnection and information Processing
- Detector Characteristics of a Vertical-Cavity Surface-Emitting Laser
- Current versus Light-Output Characteristics with No Definite Threshold in pnpn Vertical to Surface Transmission Electro-Photonic Devices with a Vertical Cavity
- Evaluation of Large-Area Mo/Si Multilayer Soft X-Ray Mirrors Fabricated by RF Magnetron Sputtering
- Outgassing Analysis in EUV Resist
- Fine Pattern Replication Using ETS-1 Three-Aspherical Mirror Imaging System
- A New Insulated-Gate Inverted-Structure Modulation-Doped AlGaAs/GaAs/N-AlGaAs Field-Effect Transistor
- Persistent Channel Depletion Caused by Hot Electron Trapping Effect in Selectively Doped n-AlGaAs/GaAs Structures
- AFI Suppressing Effect of an HTS RF Receive Filter with High Selectivity for Base Stations of Digital Wireless Communications
- High-Speed Low-Power Ring Oscillator Using Inverted-Structure Modulation-Doped GaAs/n-AlGaAs Field-Effect Transistors
- Spurious Suppression Effect by Transmit Bandpass Filters with HTS Dual-Mode Resonators for 5GHz Band
- Mitigation of Low Outgassing and Small Line Edge Roughness for EUVL Resist
- Resist Outgassing by EUV Irradiation
- Fabrication of Aspherical Mirrors for Extreme Ultra-Violet Lithography (EUVL) Using Deposition Techniques
- A Novel Design of Three-Aspherical-Mirror Imaging Optics for Extreme Ultra-Violet Lithography
- A Resonator for Tunable Superconducting Power Filters with Cavities for 5GHz Band
- Independent Characterization of Density and Interface Roughness of Multilayers Using X-Ray Standing Waves
- Effect of Electrode Materials on Lead Lanthanum Zirconate Titanate with Heating under Reduced Atmosphere
- Electrooptic Properties of Lead Zirconate Titanate Films Prepared on Silicon Substrate
- Crystallinity of Microscopically Patterned (Pb,La)(Zr,Ti)O3 Films on (001)Nb-Doped SrTiO3 Substrates Prepared by Chemical Solution Deposition Process with Resist Molds