Persistent Channel Depletion Caused by Hot Electron Trapping Effect in Selectively Doped n-AlGaAs/GaAs Structures
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-03-20
著者
-
Komano H
Tokyo Ohka Kogyo Co. Ltd. Kanagawa Jpn
-
Akiyama M
Kyushu National Industrial Research Institute Agency Of Industrial Science And Technology Ministry O
-
Nishi S
Oki Electric Ind. Co. Ltd. Yokosuka‐shi Jpn
-
Nishi Seiji
Research Laboratory Oki Electric Industry Co. Ltd.
-
Ishida Toshimasa
Research Laboratory Oki Electric Industry Co. Lid
-
Ishida Takayuki
Department Of Radiology National Federation Of Health Insurance Societies Osaka Chuo Hospital
-
Akiyama Masahiro
Research Laboratory Oki Electric Industry Co. Ltd.
-
Akiyama Masahiro
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
-
Akiyama Masahiro
Research And Development Group Oki Electric Industry Co. Ltd.
-
KAMINISHI Katsuzo
Research Laboratory, Oki Electric Industry Co., Ltd.
-
KINOSHITA Haruhisa
Research Laboratory, OKI Electric Industry Co., Ltd.
-
Kinoshita H
Laboratory Of Advanced Science And Technology For Industry University Of Hyogo
-
Kinoshita Haruhisa
Research Institute Of Electronics Shizuoka University
-
Kaminishi Katsuzo
Research Laboratory Oki Electric Industry Co. Ltd.
-
Kaminishi K
Miyazaki Univ. Miyazaki‐shi Jpn
-
NISHI Seiji
Department of Physics, Osaka University
関連論文
- Optimally Stable Electron Cyclotron Resonance Plasma Generation and Essential Points for Compact Plasma Source
- Multi-Coil System for Electron Cyclcotron Resonance Plasma Generation
- Uniform Electron Cyclotron Resonance Plasma Generation for Precise ULSI Patterning
- Field Effect of Self-Assembled Organic Multilayer in Nanogap Electrode ; Current Oscillation Behaviour at Room Temperature
- Trabecular Pattern Analysis Using Fractal Dimension
- Measure Scientific Analysis of Bone Radiographs
- Kelvin Probe Force Microscopy Imaging Using Carbon Nanotube Probe
- Novel Evaluation System for Extreme Ultraviolet Lithography Resist in NewSUBARU
- Enhanced Photovoltaic Response in Lead Lanthanum Zirconate-Titanate Ceramics with A-Site Deficient Composition for Photostrictor Application
- Intense visible light emission from Sr3Al2O6:Eu,Dy
- Bulk Photovoltaic Effect in Reducedo/Oxidized Lead Lanthanum Titanate Zirconate Ceramics
- Nonstoichiometry Effects and Their Additivity on Anomalous Photovoltaic Efficiency in Lead Lanthanum Zirconate Titanate Ceramics
- Bulk Photovoltaic Effect in Reduced/Oxidized Lead Lanthanum Titanate Zirconate Ceramics
- Scanning Tunneling Microscopy Study of Imaging Change Induced by Electric Field Change of Bipyridine Derivatives in Self-Assembled Monolayers
- Atomic Force Microscopy of Single-Walled Carbon Nanotubes Using Carbon Nanotube Tip
- Tetragonal Lattice Distortion and Tensile Stress in GaAs Layers Grown on Si Substrates by MOCVD
- Misfit and Threading Dislocations in GaAs Layers Grown on Si Substrates by MOCVD
- Characterization of Lattice Defect Structures at GaAs/Si Interface by Transmission Electron Microscopy
- Soft X-Ray Reduction Lithography Using Multilayer Mirrors : X-Ray Lithography
- Soft X-Ray Reduction Lithography Using Multilayer Mirrors
- Contrast Measurement of Reflection Masks Fabricated from Cr and Ta Absorbers for Extreme Ultraviolet Lithography
- Development of a Hybrid Scanning Near-field Optical/Tunneling Microscopor (SNOM/STM) System
- Solvent Effect on Domain Formation of 4-Mercaptopyridine Self-Assembled Monolayers on Au(111) Substrate by Scanning Tunneling Microscopy
- Alkyl Chain Length Effect on Growth Kinetics of n-Alkanethiol Self-Assembled Monolayers on Gold Studied by X-Ray Photoelectron Spectroscopy
- Zn-Te Compensated (Ga, Al) As Diodes with Negative Resistance
- Recording and Erasing Characteristics at a Wavelength of 680 nm for a Phase-Change Disk Designed for 830 nm Wavelength
- Thin Injection-Molded Substrate for High Density Recording Phase-Change Rewritable Optical Disk
- High Speed GaAs Digital Integrated Circuits
- Self-Sharpening Effect of Phase Change Erasable Media : Media
- Self-Sharpening Effect of Phase Change Erasable Media
- Outgassing Analysis in EUV Resist
- Fine Pattern Replication Using ETS-1 Three-Aspherical Mirror Imaging System
- A Study of GaAs Digital ICs on Si Substrates
- Influence of Annealing Method on Microscopic One-to-One Correlation between Threshold Voltage of GaAs MESFET and Dislocation
- The Dependence of Threshold Voltage Scattering of GaAs MESFET on Annealing Method
- A New Insulated-Gate Inverted-Structure Modulation-Doped AlGaAs/GaAs/N-AlGaAs Field-Effect Transistor
- Improved Threshold Voltage Uniformity in GaAs MESFET Using High Purity MOCVD-Grown Buffer Layer as a Substrate for Ion Implantation
- Improvement of Threshold Voltage Uniformity in Ion-Implanted GaAs-Metal-Semiconductor Field-Effect Transistors on Si
- Conductivity Measurements of Stilbene-Based Molecules Incorporated into Self-Assembled Monolayers by Conducting Probe Atomic Force Microscopy
- Heat-Induced Phase Separation of Self-Assembled Monolayers of a Fluorocarbon-Hydrocarbon Asymmetric Disulfide on a Au(111) Surface ( Scanning Tunneling Microscopy)
- Scanning Tunneling Microscopy Observations of Proton and Metal Cation Catching Behavior of Embedded Bipyridine Thiols in Alkanethiol Self-Assembled Monolayers on Au(111)
- Single-Molecule Behaviors of Conjugated 2,2'-Bipyridine Derivative Inserted in Matrix Layer Using Dendrimer-Based Template
- Influence of Sputtering and Annealing Conditions on the Structure and Ferroelectric Properties of Pb(Zr,Ti)O_3 Thin FilmS Prepared by RF Magnetron Sputtering
- Intrinsic Pinning does not Influence the Vortex Melting Transition of YBa_2Cu_3O_ in H ⊥ c Configuration
- Nanoindentation of Polycarbonate Using Carbon Nanotube Tip
- Direct Nanolithography of Organic Polysilane Films Using Carbon Nanotube Tips
- Influence of Force Acting on Side Face of Carbon Nanotube in Atomic Force Microscopy
- Lateral Conduction Model for Intermolecular Interaction of Self-Assembled Monolayers
- Large-Area Deposition of Tin Oxide Film by Photochemical Vapour Deposition (第38回真空に関する連合講演会プロシ-ディングス(1997年11月5日〜7日,東京))
- Identification of Materials using Direct Force Modulation Technique with Magnetic AFM Cantilever ( Scanning Tunneling Microscopy)
- Homogeneity of Superconductivity in YBa_2Cu_30_x Single Crystals
- High-Deposition-Rate Growth of Lead Titanate Zirconate Films by Reactive Electron Beam Coevaporation ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Overwrite Characteristics in Phase Change Optical Disk : PHASE CHANGE MEDIA I
- Quality Variation of ZnSe Heteroepitaxial Layers Correlated with Nonuniformity in the GaAs Substrate Wafer : Semiconductors and Semiconductor Devices
- Bulk Nature of Quench-Enhanced Superconductivity in Bi_2Sr_2CaCu_2O_x : Electrical Properties of Condensed Matter
- Variation of Misfit Strain in ZnSe Heteroepitaxial Layers with Temperature, Layer thickness and Growth Temperature : Semiconductors and Semiconductor Devices
- Two-Step Superconducting Transition of a Bi-Sr-Ca-Cu-O System : Electrical Properties of Condensed Matter
- Electrical and Luminescent Properties of In-Doped ZnSe Grown by Low-Pressure Vapor-Phase Epitaxy
- Persistent Channel Depletion Caused by Hot Electron Trapping Effect in Selectively Doped n-AlGaAs/GaAs Structures
- Recrystallization of Ge on SiO_2 Using SrF_2 Seed by Pseudo-Line Electron Beam Annealing
- Asymmetric Implantation Self-alignment Technique for GaAs MESFETs : Semiconductors and Semiconductors Devices
- Improved Transconductance of AlGaAs/GaAs Heterostructure FET with Si-Doped Channel
- Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
- Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate
- High-Speed Low-Power Ring Oscillator Using Inverted-Structure Modulation-Doped GaAs/n-AlGaAs Field-Effect Transistors
- Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam Epitaxy
- Method to Obtain Low-Dislocation-Density Regions by Patterning with SiO_2 on GaAs/Si Followed by Annealing
- Reduction of Stress in GaAs with In-Doped GaAs Intermediate Layer Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
- The Influence of Growth Temperature and Thermal Annealing on the Stress in GaAs Layers Grown on Si Substrates : Condensed Matter
- Enhancement of the Breakdown Voltage of GaAs/Al_xGa_As Heterostructures for GaAs Metal-Semiconductor Field Effect Transistors Grown by Metalorganic Chemical Vapor Deposition
- Characterization of Oxygen and Carbon in Undoped AlGaAs Grown by Organometallic Vapor-Phase Epitaxy
- Mitigation of Low Outgassing and Small Line Edge Roughness for EUVL Resist
- Resist Outgassing by EUV Irradiation
- Fabrication of Aspherical Mirrors for Extreme Ultra-Violet Lithography (EUVL) Using Deposition Techniques
- A Novel Design of Three-Aspherical-Mirror Imaging Optics for Extreme Ultra-Violet Lithography
- Magnetoresistance in Cubic Semiconductors with Ellipsoidal Valleys
- Bonds and Bands of Pb1-xSnxTe--Carrier Density and x Dependence of Lattice Dielectric Constant (Selected Topics in Semiconductor Physics) -- (Phase Transition)
- Analysis of Electrical and Optical Characteristics of Ar and O_2 Supermagnetron Plasmas for Submicron Etching Use
- Pulsed Supermagnetron Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Carbon Nitride Films
- Luminescence Properties of Amorphous Carbon Films Formed Using Supermagnetron Plasma
- Oxidation of Amorphous Carbon Films by Ultraviolet Light Irradiation and Thermal Annealing
- Isobutane/N2 Pulsed Radio Frequency Magnetron Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Carbon Nitride Films for Field Emission Applications
- Characterization of Oxygen and Carbon in Undoped AlGaAs Grown by Organometallic Vapor-Phase Epitaxy
- Diamond-Like Amorphous Carbon Films Deposited for Field-Emission Use by Upper-Electrode-RF-Power-Controlled Supermagnetron Plasma