Improved Transconductance of AlGaAs/GaAs Heterostructure FET with Si-Doped Channel

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関連論文

Tetragonal Lattice Distortion and Tensile Stress in GaAs Layers Grown on Si Substrates by MOCVD
Misfit and Threading Dislocations in GaAs Layers Grown on Si Substrates by MOCVD
Characterization of Lattice Defect Structures at GaAs/Si Interface by Transmission Electron Microscopy
High Speed GaAs Digital Integrated Circuits
Influence of Annealing Method on Microscopic One-to-One Correlation between Threshold Voltage of GaAs MESFET and Dislocation
The Dependence of Threshold Voltage Scattering of GaAs MESFET on Annealing Method
A New Insulated-Gate Inverted-Structure Modulation-Doped AlGaAs/GaAs/N-AlGaAs Field-Effect Transistor
Improved Threshold Voltage Uniformity in GaAs MESFET Using High Purity MOCVD-Grown Buffer Layer as a Substrate for Ion Implantation
Persistent Channel Depletion Caused by Hot Electron Trapping Effect in Selectively Doped n-AlGaAs/GaAs Structures
Recrystallization of Ge on SiO_2 Using SrF_2 Seed by Pseudo-Line Electron Beam Annealing
Improved Transconductance of AlGaAs/GaAs Heterostructure FET with Si-Doped Channel
Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate
Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate
High-Speed Low-Power Ring Oscillator Using Inverted-Structure Modulation-Doped GaAs/n-AlGaAs Field-Effect Transistors
Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam Epitaxy
Bonds and Bands of Pb1-xSnxTe--Carrier Density and x Dependence of Lattice Dielectric Constant (Selected Topics in Semiconductor Physics) -- (Phase Transition)

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