High Speed GaAs Digital Integrated Circuits

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概要

• 論文の詳細を見る

• High speed GaAs ICs (Integrated Circuits) using FETs (Field Effect Transistors) are reported. As the fabricating techniques, ion implantation processes for both 0.5μm and 0.2μm gate FETs using W/Al refractory metal and 0.2μm recessed gate process with MBE grown epitaxial wafers are shown. These fabrication processes are selected depending on the circuit speed and the integration level. The outline of the circuit design and the examples of ICs, which are developed for 10 Gb/s optical communication systems, are also shown with the obtained characteristics.

• 社団法人電子情報通信学会の論文
• 1995-09-25

著者

• NISHI Seiji

  Semiconductor Technology Laboratory, Research & Development Group, Oki Electric Industry Co., Ltd.

• Nishi S

  Oki Electric Ind. Co. Ltd. Yokosuka‐shi Jpn

• Nishi Seiji

  Research Laboratory Oki Electric Industry Co. Ltd.

• Kawakami Y

  Ntt Corp. Yokosuka‐shi Jpn

• Akiyama Masahiro

  Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.

• Kawakami Yasushi

  Semiconductor Technology Laboratory, Oki Electric Co., Ltd.

• Akiyama M

  Fujikura Ltd. Sakura‐shi Jpn

• Kawakami Yasushi

  Semiconductor Technology Laboratory Oki Electric Co. Ltd.

• Nishi Seiji

  Semiconductor Technology Laboratories Oki Electric Industry Co. Ltd.

• NISHI Seiji

  Department of Physics, Osaka University

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