Characterization of Ultrahigh-Speed Pseudomorphic InGaAs/ AlGaAs Inverted High Electron Mobility Transistors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-05-15
著者
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Tsuji Hiromi
Semiconductor Technology Laboratory Research & Development Group Oki Electric Industry Co. Ltd.
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FUJISHIRO Hiroki
Semiconductor Technology Laboratory, Research & Development Group, Oki Electric Industry Co., Ltd.
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NISHI Seiji
Semiconductor Technology Laboratory, Research & Development Group, Oki Electric Industry Co., Ltd.
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Nishi Seiji
Semiconductor Technology Laboratory Research & Development Group Oki Electric Industry Co. Ltd.
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Nishi Seiji
Semiconductor Technology Laboratories Oki Electric Industry Co. Ltd.
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Fujishiro Hiroki
Semiconductor Technology Laboratory Research & Development Group Oki Electric Industry Co. Ltd.
関連論文
- Characterization of Ultrahigh-Speed Pseudomorphic InGaAs/ AlGaAs Inverted High Electron Mobility Transistors
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- Modulation of Drain Current by Holes Generated by Impact Ionization in GaAs MESFET
- Shift in Threshold Voltage and Schottky Barrier Height of Molybdenum Gate Gallium Arsenide Field Effect Transistors after High Forward Gate Current Test