Modulation of Drain Current by Holes Generated by Impact Ionization in GaAs MESFET
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-10-20
著者
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FUJISHIRO Hiroki
Semiconductor Technology Laboratory, Research & Development Group, Oki Electric Industry Co., Ltd.
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NISHI Seiji
Semiconductor Technology Laboratory, Research & Development Group, Oki Electric Industry Co., Ltd.
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Nishi Seiji
Semiconductor Technology Laboratory Research & Development Group Oki Electric Industry Co. Ltd.
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Sano Yoshiaki
Semiconductor Technology Laboratory Research & Development Group Oki Electric Industry Co. Ltd.
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Sano Yoshiaki
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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INOKUCHI Kazuyuki
Semiconductor Technology Laboratory, Research & Development Group, Oki Electric Industry Co., Ltd.
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Inokuchi Kazuyuki
Semiconductor Technology Laboratory Research & Development Group Oki Electric Industry Co. Ltd.
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Nishi Seiji
Semiconductor Technology Laboratories Oki Electric Industry Co. Ltd.
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Fujishiro Hiroki
Semiconductor Technology Laboratory Research & Development Group Oki Electric Industry Co. Ltd.
関連論文
- Characterization of Ultrahigh-Speed Pseudomorphic InGaAs/ AlGaAs Inverted High Electron Mobility Transistors
- A Sub-10 ps/gate Direct-Coupled FET Logic Circuit with 0.2 μm-Gate GaAs MESFET
- High Speed GaAs Digital Integrated Circuits
- Sidegating Effects in Inverted AlGaAs / GaAs HEMT : Semiconductors and Semiconductor Devices
- Improvement of Threshold Voltage Uniformity in Ion-Implanted GaAs-Metal-Semiconductor Field-Effect Transistors on Si
- Modulation of Drain Current by Holes Generated by Impact Ionization in GaAs MESFET
- Shift in Threshold Voltage and Schottky Barrier Height of Molybdenum Gate Gallium Arsenide Field Effect Transistors after High Forward Gate Current Test