Shift in Threshold Voltage and Schottky Barrier Height of Molybdenum Gate Gallium Arsenide Field Effect Transistors after High Forward Gate Current Test
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-07-15
著者
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NISHI Seiji
Semiconductor Technology Laboratory, Research & Development Group, Oki Electric Industry Co., Ltd.
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Kimura T
Components Division Oki Electric Industry Co. Ltd.
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Kimura Tamotsu
Semiconductor Technology Laboratories Oki Electric Industry Co. Ltd.
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Shigemasa Ryoji
Iii-v Devices Department Components Division Oki Electric Industry
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OHSHIMA Tomoyuki
Semiconductor Technology Laboratory, Research & Development Group, Oki Electric Industry Co., Ltd.
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Nishi Seiji
Semiconductor Technology Laboratories Oki Electric Industry Co. Ltd.
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SHIGEMASA Ryoji
Semiconductor Technology Laboratories, Oki Electric Industry Co., Ltd.
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Ohshima Tomoyuki
Components Division Oki Electric Industry Co. Ltd.
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Ohshima Tomoyuki
Semiconductor Technology Laboratories Oki Electric Industry Co. Ltd.
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