Schottky Characteristics of InAlAs Grown by Metal-Organic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Schottky characteristics of InAlAs grown by metal-organic chemical vapor deposition (MOCVD) have been evaluated. InAlAs Schottky characteristics are strongly affected by MOCVD growth temperature. The reverse current of InAlAs grown at 700℃ is more than one order of magnitude larger than that at 750℃. From deep-level transient spectroscopy (DLTS) measurements, electron traps with activation energies of 0.45, 0.33 and 0.15 eV have been observed in InAlAs grown at 700℃. The results of C-V, Hall and secondary ion mass spectrometry (SIMS) measurements suggest that the trap is acceptor-type and seems to be related not to impurities but to intrinsic defects. The mechanism of the large reverse current in InAlAs grown at 700℃ is believed to be due to the conduction through the trap.
- 社団法人応用物理学会の論文
- 1999-02-28
著者
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Goto Shu
Semiconductor Technology Laboratory Oki Electric Industry
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Kimura T
Components Division Oki Electric Industry Co. Ltd.
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Kimura Tamotsu
Semiconductor Technology Laboratories Oki Electric Industry Co. Ltd.
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Shigemasa Ryoji
Iii-v Devices Department Components Division Oki Electric Industry
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SHIGEMASA Ryoji
Semiconductor Technology Laboratories, Oki Electric Industry Co., Ltd.
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Ohshima Tomoyuki
Components Division Oki Electric Industry Co. Ltd.
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Ohshima Tomoyuki
Semiconductor Technology Laboratories Oki Electric Industry Co. Ltd.
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Moriguchi Hironobu
Semiconductor Technology Laboratory Oki Electric Industry
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Tsunotani Masanori
Components Division Oki Electric Industry Co. Ltd.
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TSUNOTANI Masanori
Semiconductor Technology Laboratory, Oki Electric Industry
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