Effect of Growth Conditions on Electrical Properties of Si-Doped In_<0.52>Al_<0.48>As Grown by Metalorganic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-02-28
著者
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Kakinuma Hiroaki
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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Kakinuma Hiroaki
Semiconductor Technology Laboratory Research & Development Group Oki Electric Industry Co. Ltd.
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Kakinuma Hiroaki
Semiconducter Technology Laboratory Oki Electric Industry Co. Ltd.
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Goto S
Semiconductor Technology Laboratory Research & Development Group Oki Electric Industry Co. Ltd.
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Goto Shu
Semiconductor Technology Laboratory Oki Electric Industry
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Goto Satoru
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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UEDA Takashi
Semiconductor Technology Laboratory, Research & Development Group, Oki Electric Industry Co., Ltd.
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OHSHIMA Tomoyuki
Semiconductor Technology Laboratory, Research & Development Group, Oki Electric Industry Co., Ltd.
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Ohshima Tomoyuki
Semiconductor Technology Laboratory Research & Development Group Oki Electric Industry Co. Ltd.
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Ohshima Tomoyuki
Semiconductor Technology Laboratories Oki Electric Industry Co. Ltd.
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Ueda Takashi
Semiconductor Technology Laboratory Research & Development Group Oki Electric Industry Co. Ltd.
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Ueda Takashi
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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- Effect of Growth Conditions on Electrical Properties of Si-Doped In0.52Al0.48As Grown by Metalorganic Vapor Phase Epitaxy