The Influence of Growth Temperature and Thermal Annealing on the Stress in GaAs Layers Grown on Si Substrates : Condensed Matter
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概要
- 論文の詳細を見る
The stress in GaAs layers grown on Si substrates was studied. The GaAs layers were grown by the two-step growth sequence using reduced pressure MOCVD. The stress in the GaAs layers was found to be independent of growth temperatures and did not change after in situ thermal annealing. The value of the stress was smaller than that calculated with the bimetal model. The mechanism of stress reduction by dislocation motion was proposed to explain these phenomena.
- 社団法人応用物理学会の論文
- 1988-10-20
著者
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Akiyama M
Kyushu National Industrial Research Institute Agency Of Industrial Science And Technology Ministry O
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Akiyama Masahiro
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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Ueda T
Nuclear Engineering Research Laboratory University Of Tokyo
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ONOZAWA Sachiko
Research and Development Group, Oki Electric Industry Co., Ltd.,
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UEDA Takashi
Semiconductor Technology Laboratory, Research & Development Group, Oki Electric Industry Co., Ltd.
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ONOZAWA Sachiko
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.,
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SAKUTA Masaaki
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.,
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Onozawa Sachiko
Research And Development Group Oki Electric Industry Co. Ltd.
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Sakuta Masaaki
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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Ueda Takashi
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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