Effect of Growth Conditions on Electrical Properties of Si-Doped In0.52Al0.48As Grown by Metalorganic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
A systematic study of the electrical properties of Si-doped In0.52Al0.48As grown under various metalorganic vapor phase epitaxy (MOVPE) conditions such as V/III ratio and growth temperature is carried out. It is demonstrated that either high V/III ratios(≥64) or high growth temperatures (≥720°C) arenecessary for obtaining good InAlAs electrical properties. For a smallV/III ratio (=32) and low growth temperatures (≤700°C), a large discrepancy is found in Hall carrier concentration (nHall), ionized impurity concentration (NC – V), and Si concentration (NSi); NC – V>NSi>nHall; which can be explained by the dual formation of donor and acceptor deep levels. SIMS results suggest that carbon and oxygen impurities are not candidates for these deep levels, and other origins such as intrinsic defects, which are closely related to growth conditions, are applicable.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1999-02-28
著者
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Kakinuma Hiroaki
Semiconducter Technology Laboratory Oki Electric Industry Co. Ltd.
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Goto Shu
Semiconductor Technology Laboratory Oki Electric Industry
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Ohshima Tomoyuki
Semiconductor Technology Laboratories Oki Electric Industry Co. Ltd.
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Ueda Takashi
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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Kakinuma Hiroaki
Semiconductor Technology Laboratory, Research & Development
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Ohshima Tomoyuki
Semiconductor Technology Laboratory, Research & Development
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