Photoluminescence Visible at 77 K from Indirect-Gap Al_xGa_<1-x>As Grown by Organometallic Vapor Phase Epitaxy

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概要

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• We have observed two intense photoluminescence bands in the energy range of 1.84 to 1.98 eV for indirect-gap p-type Al_xGa_<1-x>As. They are extraordinarily intense (visible at 77 K) for indirect recombination. Their full-widths at half maximum are relatively broad (30 -60 meV). Their peak energies and relative intensities depend on the type of sample used (x, undoped, intentionally C-doped or annealed). Their intensities increase superlinearly with increasing excitation intensity, which is indicative of exciton recombination. These bands are absent for slightly Si-doped n-type materials. The origin of these strong emissions is also discussed.

• 社団法人応用物理学会の論文
• 1998-10-01

著者

• Kakinuma Hiroaki

  Semiconducter Technology Laboratory Oki Electric Industry Co. Ltd.

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• Characterization of Oxygen and Carbon in Undoped AlGaAs Grown by Organometallic Vapor-Phase Epitaxy
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