Hydrogen-Enhanced Diffusion of Plasma-Doped Phosphorus in Silicon

概要

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In order to investigate the role of hydrogen in the anomalous phosphorus diffusion in non-mass-separation-type plasma doping, we have studied the effects of prehydrogenation on the phosphorus diffusion in crystalline silicon. Secondary-ion mass spectrometry measurements show that prehydrogenated samples with an rf bias of -200 V have a much deeper penetration depth of phosphorus than samples without prehydrogenation after a PH_3 plasma treatment, indicating that diffusion of phosphorus is enhanced by the prehydrogenation. Fourier-transformation infrared spectroscopy reveals that the Si-H bonds increase after the PH_3 plasma treatment. Based on these results, the mechanism of the enhanced diffusion is discussed in terms of negatively charged monohydrogen and metastable dihydrides.
社団法人応用物理学会の論文
1995-10-15