Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1984-12-20
著者
-
Akiyama M
Kyushu National Industrial Research Institute Agency Of Industrial Science And Technology Ministry O
-
Akiyama Masahiro
Research Laboratory Oki Electric Industry Co. Ltd.
-
Akiyama Masahiro
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
-
Akiyama Masahiro
Research And Development Group Oki Electric Industry Co. Ltd.
-
KAMINISHI Katsuzo
Research Laboratory, Oki Electric Industry Co., Ltd.
-
Kaminishi Katsuzo
Research Laboratory Oki Electric Industry Co. Ltd.
-
Kaminishi K
Miyazaki Univ. Miyazaki‐shi Jpn
-
NONAKA Toshio
Research Laboratory, Oki Electric Industry Co., Ltd.
-
KAWARADA Yoshihiro
Research Laboratory, Oki Electric Industry Co., Ltd.
-
Nonaka T
Research Laboratory Oki Electric Industry Co. Ltd.
-
Kawarada Yoshihiro
Research Laboratory Oki Electric Industry Co. Ltd.
-
Nonaka Toshio
Research Laboratory Oki Electric Industry Co. Ltd.
関連論文
- Enhanced Photovoltaic Response in Lead Lanthanum Zirconate-Titanate Ceramics with A-Site Deficient Composition for Photostrictor Application
- Intense visible light emission from Sr3Al2O6:Eu,Dy
- Bulk Photovoltaic Effect in Reducedo/Oxidized Lead Lanthanum Titanate Zirconate Ceramics
- Nonstoichiometry Effects and Their Additivity on Anomalous Photovoltaic Efficiency in Lead Lanthanum Zirconate Titanate Ceramics
- Bulk Photovoltaic Effect in Reduced/Oxidized Lead Lanthanum Titanate Zirconate Ceramics
- Tetragonal Lattice Distortion and Tensile Stress in GaAs Layers Grown on Si Substrates by MOCVD
- Misfit and Threading Dislocations in GaAs Layers Grown on Si Substrates by MOCVD
- Characterization of Lattice Defect Structures at GaAs/Si Interface by Transmission Electron Microscopy
- High Speed GaAs Digital Integrated Circuits
- A Study of GaAs Digital ICs on Si Substrates
- Influence of Annealing Method on Microscopic One-to-One Correlation between Threshold Voltage of GaAs MESFET and Dislocation
- The Dependence of Threshold Voltage Scattering of GaAs MESFET on Annealing Method
- A New Insulated-Gate Inverted-Structure Modulation-Doped AlGaAs/GaAs/N-AlGaAs Field-Effect Transistor
- Improved Threshold Voltage Uniformity in GaAs MESFET Using High Purity MOCVD-Grown Buffer Layer as a Substrate for Ion Implantation
- Improvement of Threshold Voltage Uniformity in Ion-Implanted GaAs-Metal-Semiconductor Field-Effect Transistors on Si
- Persistent Channel Depletion Caused by Hot Electron Trapping Effect in Selectively Doped n-AlGaAs/GaAs Structures
- Recrystallization of Ge on SiO_2 Using SrF_2 Seed by Pseudo-Line Electron Beam Annealing
- Asymmetric Implantation Self-alignment Technique for GaAs MESFETs : Semiconductors and Semiconductors Devices
- Improved Transconductance of AlGaAs/GaAs Heterostructure FET with Si-Doped Channel
- Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
- Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate
- High-Speed Low-Power Ring Oscillator Using Inverted-Structure Modulation-Doped GaAs/n-AlGaAs Field-Effect Transistors
- Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam Epitaxy
- Method to Obtain Low-Dislocation-Density Regions by Patterning with SiO_2 on GaAs/Si Followed by Annealing
- Reduction of Stress in GaAs with In-Doped GaAs Intermediate Layer Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
- The Influence of Growth Temperature and Thermal Annealing on the Stress in GaAs Layers Grown on Si Substrates : Condensed Matter
- Enhancement of the Breakdown Voltage of GaAs/Al_xGa_As Heterostructures for GaAs Metal-Semiconductor Field Effect Transistors Grown by Metalorganic Chemical Vapor Deposition
- Characterization of Oxygen and Carbon in Undoped AlGaAs Grown by Organometallic Vapor-Phase Epitaxy
- Characterization of Oxygen and Carbon in Undoped AlGaAs Grown by Organometallic Vapor-Phase Epitaxy