Kaminishi Katsuzo | Research Laboratory Oki Electric Industry Co. Ltd.

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著作論文

Influence of Annealing Method on Microscopic One-to-One Correlation between Threshold Voltage of GaAs MESFET and Dislocation
The Dependence of Threshold Voltage Scattering of GaAs MESFET on Annealing Method
A New Insulated-Gate Inverted-Structure Modulation-Doped AlGaAs/GaAs/N-AlGaAs Field-Effect Transistor
Improved Threshold Voltage Uniformity in GaAs MESFET Using High Purity MOCVD-Grown Buffer Layer as a Substrate for Ion Implantation
Persistent Channel Depletion Caused by Hot Electron Trapping Effect in Selectively Doped n-AlGaAs/GaAs Structures
Recrystallization of Ge on SiO_2 Using SrF_2 Seed by Pseudo-Line Electron Beam Annealing
Improved Transconductance of AlGaAs/GaAs Heterostructure FET with Si-Doped Channel
Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate
Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate
High-Speed Low-Power Ring Oscillator Using Inverted-Structure Modulation-Doped GaAs/n-AlGaAs Field-Effect Transistors
Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam Epitaxy

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