Akiyama Masahiro | Research And Development Group Oki Electric Industry Co. Ltd.

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概要

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著作論文

Tetragonal Lattice Distortion and Tensile Stress in GaAs Layers Grown on Si Substrates by MOCVD
Misfit and Threading Dislocations in GaAs Layers Grown on Si Substrates by MOCVD
Characterization of Lattice Defect Structures at GaAs/Si Interface by Transmission Electron Microscopy
A Study of GaAs Digital ICs on Si Substrates
A New Insulated-Gate Inverted-Structure Modulation-Doped AlGaAs/GaAs/N-AlGaAs Field-Effect Transistor
Improved Threshold Voltage Uniformity in GaAs MESFET Using High Purity MOCVD-Grown Buffer Layer as a Substrate for Ion Implantation
Persistent Channel Depletion Caused by Hot Electron Trapping Effect in Selectively Doped n-AlGaAs/GaAs Structures
Recrystallization of Ge on SiO_2 Using SrF_2 Seed by Pseudo-Line Electron Beam Annealing
Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate
Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate
High-Speed Low-Power Ring Oscillator Using Inverted-Structure Modulation-Doped GaAs/n-AlGaAs Field-Effect Transistors
Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam Epitaxy

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