Nishi Seiji | Research Laboratory Oki Electric Industry Co. Ltd.

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著作論文

Tetragonal Lattice Distortion and Tensile Stress in GaAs Layers Grown on Si Substrates by MOCVD
Misfit and Threading Dislocations in GaAs Layers Grown on Si Substrates by MOCVD
Characterization of Lattice Defect Structures at GaAs/Si Interface by Transmission Electron Microscopy
High Speed GaAs Digital Integrated Circuits
A New Insulated-Gate Inverted-Structure Modulation-Doped AlGaAs/GaAs/N-AlGaAs Field-Effect Transistor
Persistent Channel Depletion Caused by Hot Electron Trapping Effect in Selectively Doped n-AlGaAs/GaAs Structures
Improved Transconductance of AlGaAs/GaAs Heterostructure FET with Si-Doped Channel
Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate
High-Speed Low-Power Ring Oscillator Using Inverted-Structure Modulation-Doped GaAs/n-AlGaAs Field-Effect Transistors
Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam Epitaxy

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