Tsunotani Masanori | Components Division Oki Electric Industry Co. Ltd.
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概要
関連著者
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Kimura T
Components Division Oki Electric Industry Co. Ltd.
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Ohshima Tomoyuki
Components Division Oki Electric Industry Co. Ltd.
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Tsunotani Masanori
Components Division Oki Electric Industry Co. Ltd.
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Shigemasa Ryoji
Iii-v Devices Department Components Division Oki Electric Industry
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Kimura Tamotsu
Semiconductor Technology Laboratories Oki Electric Industry Co. Ltd.
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SHIGEMASA Ryoji
Semiconductor Technology Laboratories, Oki Electric Industry Co., Ltd.
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Ohshima Tomoyuki
Semiconductor Technology Laboratories Oki Electric Industry Co. Ltd.
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TSUNOTANI Masanori
Semiconductor Technology Laboratory, Oki Electric Industry
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Goto Shu
Semiconductor Technology Laboratory Oki Electric Industry
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Nitta Yoshiki
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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Hoshi Shinichi
Iii-v Devices Department Optical Components Oki Electric Industry
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HOSHI Shinichi
Components Division, Oki Electric Industry Co., Ltd.
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IZUMI Takayuki
Components Division, Oki Electric Industry Co., Ltd.
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OHSHIMA Tomoyuki
Components Division, Oki Electric Industry Co., Ltd.
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TSUNOTANI Masanori
Components Division, Oki Electric Industry Co., Ltd.
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KIMURA Tamotsu
Components Division, Oki Electric Industry Co., Ltd.
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Hoshi Shinichi
Components Division Oki Electric Industry Co. Ltd.
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Ohshima Tomoyuki
Iii-v Devices Department Optical Components Oki Electric Industry Co. Ltd.
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Moriguchi Hironobu
Semiconductor Technology Laboratory Oki Electric Industry
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Tsunotani Masanori
Iii-v Devices Department Optical Components Oki Electric Industry Co. Ltd.
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Izumi T
Components Division Oki Electric Industry Co. Ltd.
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YOSHIDA Masaaki
III-V Devices Department, Components Division, Oki Electric Industry
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KIMURA Tamotsu
III-V Devices Department, Components Division, Oki Electric Industry
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Yoshida Masaaki
Iii-v Devices Department Components Division Oki Electric Industry
著作論文
- The Recovery Process of RIE-Damage in InGaAs/AlGaAs PHEMT Using Recombination Enhanced Defect Reaction (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Gate Orientation Dependence of InGaAs/AlGaAs High Electron Mobility Transistors
- Schottky Characteristics of InAlAs Grown by Metal-Organic Chemical Vapor Deposition
- Development of the High Aspect-Ratio Y-Shaped Gate Process for HEMT