Gate Orientation Dependence of InGaAs/AlGaAs High Electron Mobility Transistors

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概要

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• The gate orientation dependence ofInGaAs/AlGaAs high electron mobility transistors (HEMTs) formed by the wet-chemical recess etching has been evaluated. The short channel effect strongly depends on the gate orientation and is significant in the order of [011], [001] and [011] oriented devices. Such orientation dependence results from a difference of the side-etching lengths, which are 0.01μm, 0.03μm and 0.06μm for [011], [001] and [011] oriented devices, respectively. The other characteristics of HEMTs such BV_<gd> gm and f_T also depend on the gate orientation because of a differece of the recessed shape.

• 社団法人応用物理学会の論文
• 2000-09-15

著者

• Kimura T

  Components Division Oki Electric Industry Co. Ltd.

• Shigemasa Ryoji

  Iii-v Devices Department Components Division Oki Electric Industry

• Ohshima Tomoyuki

  Components Division Oki Electric Industry Co. Ltd.

• Ohshima Tomoyuki

  Iii-v Devices Department Optical Components Oki Electric Industry Co. Ltd.

• Tsunotani Masanori

  Components Division Oki Electric Industry Co. Ltd.

• Tsunotani Masanori

  Iii-v Devices Department Optical Components Oki Electric Industry Co. Ltd.

• YOSHIDA Masaaki

  III-V Devices Department, Components Division, Oki Electric Industry

• KIMURA Tamotsu

  III-V Devices Department, Components Division, Oki Electric Industry

• Yoshida Masaaki

  Iii-v Devices Department Components Division Oki Electric Industry

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