Double-Recessed 0.1-μm-Gate InP HEMTs for 40 Gbit/s Optical Communication Systems
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
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Hoshi Shinichi
Iii-v Devices Department Optical Components Oki Electric Industry
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Hoshi Shinichi
Iii-v Devices Department Optical Components Oki Electric Industry Co. Ltd.
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MORIGUCHI Hironobu
III-V Devices Department, Optical Components, Oki Electric Industry Co., Ltd.
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ITOH Masanori
III-V Devices Department, Optical Components, Oki Electric Industry Co., Ltd.
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OHSHIMA Tomoyuki
III-V Devices Department, Optical Components, Oki Electric Industry Co., Ltd.
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TSUNOTANI Masanori
III-V Devices Department, Optical Components, Oki Electric Industry Co., Ltd.
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ICHIOKA Toshihiko
III-V Devices Department, Optical Components, Oki Electric Industry Co., Ltd.
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Ohshima Tomoyuki
Iii-v Devices Department Optical Components Oki Electric Industry Co. Ltd.
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Ichioka Toshihiko
Iii-v Devices Department Optical Components Oki Electric Industry Co. Ltd.
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Moriguchi Hironobu
Iii-v Devices Department Optical Components Oki Electric Industry Co. Ltd.
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Tsunotani Masanori
Iii-v Devices Department Optical Components Oki Electric Industry Co. Ltd.
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Itoh Masanori
Iii-v Devices Department Optical Components Oki Electric Industry Co. Ltd.
関連論文
- The Recovery Process of RIE-Damage in InGaAs/AlGaAs PHEMT Using Recombination Enhanced Defect Reaction (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Double-Recessed 0.1-μm-Gate InP HEMTs for 40 Gbit/s Optical Communication Systems
- Gate Orientation Dependence of InGaAs/AlGaAs High Electron Mobility Transistors
- Double-Recessed 0.1-μm-Gate InP HEMTs for 40 Gbit/s Optical Communication Systems