A Sub-10 ps/gate Direct-Coupled FET Logic Circuit with 0.2 μm-Gate GaAs MESFET
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-12-20
著者
-
Tsuji H
Semiconductor Technology Laboratory Research And Development Group Oki Electric Industry Co. Lid.
-
Tsuji Hiromi
Semiconductor Technology Laboratory Research & Development Group Oki Electric Industry Co. Ltd.
-
NISHI Seiji
Semiconductor Technology Laboratory, Research & Development Group, Oki Electric Industry Co., Ltd.
-
INOMATA-FUJISHIRO Hiroki
Semiconductor Technology Laboratory, Research and Development Group, Oki Electric Industry Co., Lid.
-
NAKAMURA Hiroshi
Semiconductor Technology Laboratory, Research and Development Group, Oki Electric Industry Co., Lid.
-
Nishi Seiji
Semiconductor Technology Laboratories Oki Electric Industry Co. Ltd.
-
Nishi Seiji
Semiconductor Technology Laboratory Research And Development Group Oki Electric Industry Co. Lid.
-
Inomata-fujishiro Hiroki
Semiconductor Technology Laboratory Research And Development Group Oki Electric Industry Co. Lid.
関連論文
- Characterization of Ultrahigh-Speed Pseudomorphic InGaAs/ AlGaAs Inverted High Electron Mobility Transistors
- A Sub-10 ps/gate Direct-Coupled FET Logic Circuit with 0.2 μm-Gate GaAs MESFET
- High Speed GaAs Digital Integrated Circuits
- Sidegating Effects in Inverted AlGaAs / GaAs HEMT : Semiconductors and Semiconductor Devices
- Modulation of Drain Current by Holes Generated by Impact Ionization in GaAs MESFET
- Shift in Threshold Voltage and Schottky Barrier Height of Molybdenum Gate Gallium Arsenide Field Effect Transistors after High Forward Gate Current Test