Diamond-Like Amorphous Carbon Films Deposited for Field-Emission Use by Upper-Electrode-RF-Power-Controlled Supermagnetron Plasma

概要

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Nitrogenated and hydrogenated diamond-like amorphous carbon (DAC:N and DAC:H) films were synthesized using i-C4H10/(N2 and H2) supermagnetron plasma, respectively. The upper- and lower-electrode rf powers (UPRF/LORF) were controlled to be 100–800/100 W, and N2 and the H2 concentrations were selected to be 25 and 20%, respectively. In the DAC:N layer deposited at 300/100 W, the nitrogen atom concentration was measured to be 1.7 mass %. In the case of DAC:N film, the lowest threshold electric field intensity ($E_{\text{TH}}$) was observed to be 12 V/μm at the growth condition of 300/100 W. In the case of a DAC:H planar structure, the lowest $E_{\text{TH}}$ was 13 V/μm for 800/100 W deposition. In both types in the films with the lowest $E_{\text{TH}}$, we observed the same optical band gap of approximately 1.2 eV. The optimum distribution and size of sp2 CC nanoclusters formed in both the DAC layers probably caused the $E_{\text{TH}}$ to decrease.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-10-30