Generalized scatterometry of laterally patterned periodic nanostructures based on spectroscopic ellipsometry
スポンサーリンク
概要
著者
-
YAMAGUCHI Tomuo
Research Institute of Electronics, Shizuoka University
-
AOYAMA Mitsuru
Research Institute of Electronics, Shizuoka University
-
Aoyama Mitsuru
Research Institute Of Electronics Shizuoka University
-
Yamaguchi Tomuo
Research Institute Of Electronics Shizuoka University
-
Antos Roman
Graduate School Of Electronic Science And Technology Shizuoka University
-
Mistrik Jan
Research Institute Of Electronics Shizuoka University
-
Visnovsky Stefan
Institute of Physics, Charles University
-
Visnovsky Stefan
Institute Of Physics Charles University
-
Antos Romam
Graduate School of Electronic Science and Technology, Shizuoka University
関連論文
- A Study of Cr-Al Oxides for Single-Layer Halftone Phase-Shifting Masks for Deep-Ultraviolet Region Photolithography
- The Application of Silicon Rich Nitride Films for Use as Deep-Ultraviolet Lithography Phase-Shifting Masks
- Mid-Infrared Photoluminescence from Liquid Phase Epitaxial InAs_Sb_y/InAs Multilayers
- Melt Mixing of the 0.3In/0.7GaSb/0.3Sb Solid Combination by Diffusion under Microgravity
- Room Temperature InAs_xP_Sb_y/InAs Photodetectors with High Quantum Efficiency
- Liquid Phase Epitaxial Growth of High-Quality GaInAsSb/InAs
- LPE Ga_In_xSb Multigrading Layers with Cut-off Wavelength up to 4.71 μm (x=0.75)
- Possibility of Simultaneous Monitoring of Temperature and Surface Layer Thickness of Si Substrate by In Situ Spectroscopic Ellipsometry
- Optical Properties of InAsSb Single Crystals with Cutoff Wavelengths of 8-12μm Grown by Melt-Epitaxy
- Electrical Properties of Melt-Epitaxy-Grown InAs_Sb_ Layers with Cutoff Wavelength of 12μm
- InNAsSb Single Crystals with Cutoff Wavelength of 11-13.5 μm Grown by Melt Epitaxy
- Light-Emitting Diodes with a Peak Wavelength of 5.38 μm from Liquid-Phase Epitaxial Ga_ In_ Sb/InSb Heterostructures(Semiconductors)
- Room-Temperature Mid-Infrared Light-Emitting Diodes from Liquid-Phase Epitaxial InAs/InAs_Sb_/InAs_P_Sb_ Heterostructures
- InAs_Sb_y Single Crystals with Cutoff Wavelength of 8-12 μm Grown by a New Method
- Room-Temperature Operation of InAsSb/InAsPSb Photodetectors with a Cut-off Wavelength of 4.3 μm
- Influence of Sulphidation Treatment on the Performance of Mid-Infrared InAsPSb/InAs Detectors
- Optical Properties of High-Quality Ga_In_xAs_Sb_y/InAs Grown by Liquid-Phase Epitaxy
- Actual Carrier Mobility Determination of GaInAsSb/InAs Grown by Liquid Phase Epitaxy
- Liquid Phase Epitaxial Growth and Characterization of High Quality GaInAsSb/InAs for Photodiodes
- Melt Epitaxial Growth of High Quality InAs_Sb_y and In_xGa_Sb single crystals with cutoff wavelength of 7-12 μm
- Characterization of Interface Layer of Silicon on Sapphire Using Spectroscopic Ellipsometry
- Spectroscopic Ellipsometry of SIMOX (Separation by Implanted Oxygen): Thickness Distribution of Buried Oxide and Optical Properties of Top-Si Layer
- Germanium- and Zinc-Doped P-type InAsSb Single Crystals with a Cutoff Wavelength of 12.5 μm
- A Novel Method for Exciting Surface Plasmons in Metals : Coupling of Light with a Granular Dielectric Overcoat
- Low Temperature Fabrication of Thin Film Transistors using Microcrystalline Si Deposited by Cathode-Type RF Glow Discharge
- Generalized scatterometry of laterally patterned periodic nanostructures based on spectroscopic ellipsometry
- Magneto-optical spectroscopic scatterometry for analyzing patterned magnetic nanostructures(Selected papers from MORIS 2006 Workshop on Thermal & Optical Magnetic Materials and Devices)
- Modelling of Two-Dimensional Magnetooptical Gratings
- Quadratic Magneto-Optic Effects in Reflection from Uniaxial Crystals
- Optimum Gas Pressure of Soft Vacuum Pyroelectric Vidicon
- Lag and Resolution Related with Current Distribution of Electron Beam in Camera Tubes
- SiO_2 Electret Generated by Potassium Ions on a Comb-Drive Actuator
- Melt Mixing of the 0.3In/0.7GaSb/0.3Sb Solid Combination by Diffusion under Microgravity
- InNAsSb Single Crystals with Cutoff Wavelength of 11–13.5 μm Grown by Melt Epitaxy
- Electrical Properties of Melt-Epitaxy-Grown InAs0.04Sb0.96 Layers with Cutoff Wavelength of 12 μm
- Diamond-Like Amorphous Carbon Films Deposited for Field-Emission Use by Upper-Electrode-RF-Power-Controlled Supermagnetron Plasma
- Optical Properties of InAsSb Single Crystals with Cutoff Wavelengths of 8–12 μm Grown by Melt-Epitaxy
- Room-Temperature Mid-Infrared Light-Emitting Diodes from Liquid-Phase Epitaxial InAs/InAs0.89Sb0.11/InAs0.80P0.12Sb0.08 Heterostructures
- Characterization of Interface Layer of Silicon on Sapphire Using Spectroscopic Ellipsometry