Isobutane/N2 Pulsed Radio Frequency Magnetron Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Carbon Nitride Films for Field Emission Applications
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概要
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Radio frequency (rf) supermagnetron plasma was modulated by pulse and was applied to the deposition of hydrogenated amorphous carbon nitride (a-CNx:H) films. The range of upper/lower electrode rf powers (UPRF/LORF) was selected as 200/50--800 W, and films were deposited using isobutane (i-C4H10)/N2 plasma. Phase-controlled rf power (13.56 MHz) was modulated by a 2.5-kHz pulse frequency, and the duty ratio was selected as 12.5%. With increases in LORF, the optical band gap decreased from 1.3 to 0.6 eV, and the hardness became sufficiently high, reaching a peak (34 GPa) at LORFs of 200 and 400 W. A low field emission threshold of 11 V/μm was obtained in the films deposited at LORF of 400 W, and gas pressure of 4 Pa.
- 2012-08-25
著者
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Kinoshita Haruhisa
Research Institute Of Electronics Shizuoka University
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Kinoshita Haruhisa
Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan
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Tanaka Sumio
Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan
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