Luminescence Properties of Amorphous Carbon Films Formed Using Supermagnetron Plasma
スポンサーリンク
概要
- 論文の詳細を見る
Polymer-like amorphous carbon (a-COx:H and a-CNx:H) films were deposited using two types of supermagnetron plasma, i.e., Ar sputter and i-C4H10/N2 chemical vapor deposition (CVD), respectively. The sp2 clustering of these films was proved experimentally by Raman scattering and the estimation of optical band gap. The photoluminescence (PL) and electroluminescence (EL) properties of these films were measured and analyzed. As a result, a-COx:H films deposited by Ar sputtering showed similar peak energies for PL and EL (1.9–2.0 eV), while a-CNx:H films deposited by i-C4H10/N2 CVD showed large shifts between peak energies for PL (2.2 eV) and EL (1.7 eV). The differences in peak energies in the latter were ascribed to the luminescence characteristics caused by sp2 clusters embedded in the sp3 carbon matrix.
- 2008-09-25
著者
-
Nakanishi Yoichiro
Research Institute Of Electronics Graduate School Of Electronic Science And Technology Shizuoka Univ
-
Kinoshita Haruhisa
Research Institute Of Electronics Shizuoka University
-
Sakurai Katsutoshi
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
-
Ohno Genji
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
-
Kubota Masaya
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
関連論文
- レーザアニールによるSrGa_2S_4:Eu薄膜蛍光体の作製と発光特性(発光型/非発光型ディスプレイ)
- 加圧焼成により作製したZnCdO粒子の構造及び発光特性(発光型/非発光型ディスプレイ)
- この40年のディスプレイ技術の変遷と将来展望について(電子ディスプレイ,エレクトロニクスソサイエティ和文論文誌500号記念論文)
- 化学気相法による六方晶BN粉末の作製(発光型/非発光型ディスプレイ)
- クエン酸ゲル法を用いて合成した近紫外線励起用赤色蛍光体La_2O_2S:Euの発光特性(発光型/非発光型ディスプレイ技術の進展)
- AS-3-6 広色域実現を目指した蛍光体の研究(AS-3.イメージメディアクオリティの基盤技術,シンポジウムセッション)
- クエン酸ゲル法によるLa_2O_2S:Eu合成における粒径制御(発光型/非発光型ディスプレイ合同研究会)
- 化学気相法による六方晶BN粉末の作製
- 加圧焼成により作製したZnCdO粒子の構造及び発光特性
- レーザアニールによるSrGa_2S_4:Eu薄膜蛍光体の作製と発光特性
- レーザアニールによるSrGa_2S_4:Eu薄膜蛍光体の作製と発光特性(発光型/非発光型ディスプレイ)
- 化学気相法による六方晶BN粉末の作製(発光型/非発光型ディスプレイ)
- 加圧焼成により作製したZnCdO粒子の構造及び発光特性(発光型/非発光型ディスプレイ)
- Preparation of aluminum oxide films at low temperatures by a hot wall technique
- Growth of p-type ZnSe Films by Radical Assisted MOCVD Method
- Deposition of Aluminum Nitride by Remote Plasma-Enhanced Chemical Vapor Deposition Using Triisobutyle Aluminum
- Growth of microcrystalline Si films in cathode-type rf GD at high SiH_4 concentration
- Preparation of Polycrystalline Silicon Thin Films by Cathode-Type RF Glow Discharge Method
- Growth of Highly Oriented Silicon Films on Si(100) and Al_2O_3(0112) by Cathode-type rf Glow Discharge Method
- Growth of Y_2O_2S:Eu Thin Films by Reactive Magnetron Sputtering and Electroluminescent Characteristics
- Characteristics of Y_2O_3:Eu/ZnS/Y_2O_3:Eu Red Light Emitting Electroluminescent Devices
- Structure and Luminescent Property of Y_2O_2S:Eu Thin Films Prepared by Magnetron Sputtering
- Green Cathodoluminescence Properties of Zinc Oxide Films Prepared by Excimer Laser Irradiation of a Sol-Gel-Derived Precursor
- A New Insulated-Gate Inverted-Structure Modulation-Doped AlGaAs/GaAs/N-AlGaAs Field-Effect Transistor
- Low Temperature Fabrication of Thin Film Transistors using Microcrystalline Si Deposited by Cathode-Type RF Glow Discharge
- Persistent Channel Depletion Caused by Hot Electron Trapping Effect in Selectively Doped n-AlGaAs/GaAs Structures
- High-Speed Low-Power Ring Oscillator Using Inverted-Structure Modulation-Doped GaAs/n-AlGaAs Field-Effect Transistors
- 電子線励起紫外発光ZnAl_2O_4蛍光体の焼成条件依存性(発光型/非発光型ディスプレイ合同研究会)
- Mechanism of Plasma Assisted a-SiC:H Film Deposition
- Remote Plasma SiO_2 Deposition by Tetraethoxysilane with Chemically and Energetically Different Atomic Species
- 355nmレーザアニールによる希土類添加SrGa_2S_4薄膜蛍光体の作製(発光型/非発光型ディスプレイ合同研究会)
- Photoluminescence property of ZnAl2O4: Mn chromatic pure green phosphors (特集 光源・照明の新潮流)
- 355nmレーザアニールによる希土類添加SrGa_2S_4薄膜蛍光体の作製
- 電子線励起紫外発光ZnAl_2O_4蛍光体の焼成条件依存性
- 白色LED照明の用途に向けた蛍光体
- 355nmレーザアニールによる希土類添加SrGa_2S_4薄膜蛍光体の作製(発光型/非発光型ディスプレイ,テーマ:ディスプレイに関する技術全般:LCD(バックライトを含む),PDP,有機/無機EL,CRT,FED,VFD,LEDなどのディスプレイに関するデバイス,部品,材料及び応用技術)
- 電子線励起紫外発光ZnAl_2O_4蛍光体の焼成条件依存性(発光型/非発光型ディスプレイ,テーマ:ディスプレイに関する技術全般:LCD(バックライトを含む),PDP,有機/無機EL,CRT,FED,VFD,LEDなどのディスプレイに関するデバイス,部品,材料及び応用技術)
- Magnetoresistance in Cubic Semiconductors with Ellipsoidal Valleys
- Analysis of Electrical and Optical Characteristics of Ar and O_2 Supermagnetron Plasmas for Submicron Etching Use
- Preparation and Properties of ZnS: Ag, Cu, Cl Phosphor Powder Emitting Blue Electroluminescence
- Pulsed Supermagnetron Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Carbon Nitride Films
- Investigation of the Fabrication Parameters Affecting the Cathodoluminescence Property of ZnAl2O4:Mn Green Phosphors
- Luminescence Properties of Amorphous Carbon Films Formed Using Supermagnetron Plasma
- Electronic Characterization of New Bright-Blue-Light-Emitting Poly(9,9-dioctylfluorenyl-2,7-diyl)-End Capped With Polyhedral Oligomeric Silsesquioxanes
- Oxidation of Amorphous Carbon Films by Ultraviolet Light Irradiation and Thermal Annealing
- Photoluminescence property of ZnAl2O4: Mn chromatic pure green phosphors (特集 光源・照明の新潮流)
- Isobutane/N2 Pulsed Radio Frequency Magnetron Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Carbon Nitride Films for Field Emission Applications
- Effects of H2S Treatment on Structural and Luminescent Characteristics of Blue-Emitting (Sr1-xCax)S:Cu,F Thin Films
- Diamond-Like Amorphous Carbon Films Deposited for Field-Emission Use by Upper-Electrode-RF-Power-Controlled Supermagnetron Plasma
- Green Cathodoluminescence Properties of Zinc Oxide Films Prepared by Excimer Laser Irradiation of a Sol–Gel-Derived Precursor
- Studies on the formation of magnetite colloidal dispersions in the presence of poly(vinyl alcohol).