Analysis of Electrical and Optical Characteristics of Ar and O_2 Supermagnetron Plasmas for Submicron Etching Use
スポンサーリンク
概要
著者
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Honda Masahiro
Research Institute Of Electronics Shizuoka University
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Kinoshita Haruhisa
Research Institute Of Electronics Shizuoka University
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Sakiya Fumio
Rorze Corporation
関連論文
- A New Insulated-Gate Inverted-Structure Modulation-Doped AlGaAs/GaAs/N-AlGaAs Field-Effect Transistor
- Persistent Channel Depletion Caused by Hot Electron Trapping Effect in Selectively Doped n-AlGaAs/GaAs Structures
- High-Speed Low-Power Ring Oscillator Using Inverted-Structure Modulation-Doped GaAs/n-AlGaAs Field-Effect Transistors
- Magnetoresistance in Cubic Semiconductors with Ellipsoidal Valleys
- Analysis of Electrical and Optical Characteristics of Ar and O_2 Supermagnetron Plasmas for Submicron Etching Use
- Pulsed Supermagnetron Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Carbon Nitride Films
- Luminescence Properties of Amorphous Carbon Films Formed Using Supermagnetron Plasma
- Oxidation of Amorphous Carbon Films by Ultraviolet Light Irradiation and Thermal Annealing
- Isobutane/N2 Pulsed Radio Frequency Magnetron Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Carbon Nitride Films for Field Emission Applications
- Diamond-Like Amorphous Carbon Films Deposited for Field-Emission Use by Upper-Electrode-RF-Power-Controlled Supermagnetron Plasma