Inokawa Hiroshi | Research Institute of Electronics, Shizuoka University

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概要

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著作論文

Single-electron transfer in phosphorous-doped Si nanowire FETs
Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
Effect of UV/ozone Treatment of Nanogap Electrodes for Molecular Devices
A Field-Effect Transistor with a Deposited Graphite Thin Film
Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
Fabrication of double-dot single-electron transistor in silicon nanowire
Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
Fabrication of double-dot single-electron transistor in silicon nanowire
Capacitive Parameter Extraction for Nanometer-Size Field-Effect Transistors
Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays

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