Self-Limiting Adsorption of SiCl_2H_2 and Its Application to the Layer-by-Layer Photochemical Process
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Adsorption of SiCl_2H_2 on the Ge(100) clean surface is investigated by X-ray photoelectron spectroscopy and thermal desorption spectrum measurement. It is concluded that the adsorption is self-limiting at temperatures below 350℃, and that the surface is reactivated by synchrotron radiation. The sequential processes of self-limiting adsorption of SiCl_2H_2 and synchrotron radiation are promising for development of Si atomic layer epitaxy.
- 社団法人応用物理学会の論文
- 1991-02-01
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