Ge Atomic Layer Epitaxy by Use of Ar Ion Laser Heating
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概要
- 論文の詳細を見る
Ge atomic layer epitaxy (ALE) was demonstrated using the technique of iterative surface reaction of diethylgerman (Ge(C2H5)2H2) gas followed by thermal desorption of the ethyl group. The desorption was carried out by Ar ion laser heating which provided fast response and high controllability. Single-crystal growth of one layer per cycle was attained with good reproducibility without carbon contamination using this technique.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-11-20
著者
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TAKAHASHI Yasuo
NTT LSI Laboratories
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Urisu Tsuneo
Ntt Lsi Laboratories
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SESE Yoshiteru
Nagaoka University of Technokogy 1603-1
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Urisu Tsuneo
NTT LSI Laboratories, 3-1, Morinosato Watamiya, Atsugi-shi, Kanagawa, 243-01
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